ADS7806
ADS7806
ADS7806
SBAS021B NOVEMBER 1992 REVISED SEPTEMBER 2003
Low-Power 12-Bit Sampling CMOS
ANALOG-to-DIGITAL CONVERTER
FEATURES DESCRIPTION
POWER DISSIPATION: 35mW max The ADS7806 is a low-power, 12-bit, sampling Analog-to-
Digital (A/D) converter using state of the art CMOS structures.
POWER-DOWN MODE: 50 W
It contains a complete 12-bit, capacitor-based, Successive
ACQUISITION AND CONVERSION: 25 s max
Approximation Register (SAR) A/D converter with sample-
1/2 LSB MAX INL AND DNL
and-hold, clock, reference, and a microprocessor interface with
72dB MIN SINAD WITH 1kHz INPUT parallel and serial output drivers.
INPUT RANGES: 10V, 0V to +5V, and 0V TO +4V The ADS7806 can acquire and convert to full 12-bit accuracy
in 25 s max, while consuming only 35mW max. Laser
SINGLE +5V SUPPLY OPERATION
trimmed scaling resistors provide standard industrial input
PARALLEL AND SERIAL DATA OUTPUT
ranges of 10V and 0V to +5V. In addition, a 0V to +4V range
PIN-COMPATIBLE WITH THE 16-BIT ADS7807
allows development of complete single-supply systems.
USES INTERNAL OR EXTERNAL REFERENCE
The ADS7806 is available in a 0.3" DIP-28 and SO-28, both
0.3" DIP-28 AND SO-28 fully specified for operation over the industrial 40C to
+85C temperature range.
R/C
Clock
CS
Successive Approximation Register and Control Logic
BYTE
Power
Down
40k
CDAC
R1
IN
BUSY
Parallel
Serial Data
20k 40k
and
Clock
10k
Serial
Comparator
R2
IN
Serial Data
Data
CAP
Out
Parallel Data
Buffer 8
6k
Internal
Reference
REF
+2.5V Ref
Power-Down
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright 1992-2003, Texas Instruments Incorporated
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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ABSOLUTE MAXIMUM RATINGS
ELECTROSTATIC
Analog Inputs: R1 ............................................................................ 12V
IN
R2 ........................................................................... 5.5V DISCHARGE SENSITIVITY
IN
CAP ................................... V + 0.3V to AGND2 0.3V
ANA
REF .......................................... Indefinite Short to AGND2, This integrated circuit can be damaged by ESD. Texas Instru-
Momentary Short to V
ANA
ments recommends that all integrated circuits be handled with
Ground Voltage Differences: DGND, AGND1, and AGND2 ............. 0.3V
appropriate precautions. Failure to observe proper handling
V ....................................................................................................... 7V
ANA
V to V ...................................................................................... +0.3V and installation procedures can cause damage.
DIG ANA
V ........................................................................................................ 7V
DIG
ESD damage can range from subtle performance degrada-
Digital Inputs ............................................................. 0.3V to V + 0.3V
DIG
Maximum Junction Temperature ................................................... +165C tion to complete device failure. Precision integrated circuits
Internal Power Dissipation ............................................................. 825mW
may be more susceptible to damage because very small
Lead Temperature (soldering, 10s) ............................................... +300C
parametric changes could cause the device not to meet its
NOTE: (1) Stresses above those listed under Absolute Maximum Ratings
published specifications.
may cause permanent damage to the device. Exposure to absolute maximum
conditions for extended periods may affect device reliability.
PACKAGE/ORDERING INFORMATION
MAXIMUM MINIMUM
INTEGRAL SIGNAL-TO- SPECIFIED
LINEARITY (NOISE + DISTORTION) PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT
(1)
PRODUCT ERROR (LSB) RATIO (DB) PACKAGE-LEAD DESIGNATOR RANGE MARKING NUMBER MEDIA, QUANTITY
ADS7806P 0.9 70 DIP-28 NT 40C to +85C ADS7806P ADS7806P Tubes, 13
ADS7806PB 0.45 72" ADS7806PB ADS7806PB Tubes, 13
ADS7806U 0.9 70 SO-28 DW 40C to +85C ADS7806U ADS7806U Tubes, 28 ADS7806U ADS7806U/1K Tape and Reel, 1000
ADS7806UB 0.45 72" ADS7806UB ADS7806UB Tubes, 28 ADS7806UB ADS7806UB/1K Tape and Reel, 1000
NOTE: (1) For the most current specifications and package information, refer to our web site at www.ti.com.
ELECTRICAL CHARACTERISTICS
At T = 40C to +85C, f = 40kHz, V = V = +5V, and using internal reference and fixed resistors (see Figure 7b), unless otherwise specified.
A S DIG ANA
ADS7806P, U ADS7806PB, UB
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
RESOLUTION 12 Bits
ANALOG INPUT
Voltage Ranges 10, 0 to +5, 0 to +4 V
Impedance (See Table I)
Capacitance 35 pF
THROUGHPUT SPEED
Conversion Time 20 s
Complete Cycle Acquire and Convert 25 s
Throughput Rate 40 kHz
DC ACCURACY
(1)
Integral Linearity Error 0.15 0.9 0.45 LSB
Differential Linearity Error 0.15 0.9 0.45 LSB
No Missing Codes Tested Bits
(2)
Transition Noise 0.1 LSB
Gain Error 0.2 0.1 %
(3,4)
Full-Scale Error 0.5 0.25 %
Full-Scale Error Drift 7 5 ppm/C
(3,4)
Full-Scale Error Ext. 2.5000V Ref 0.5 0.25 %
Full-Scale Error Drift Ext. 2.5000V Ref 0.5 ppm/C
(3)
Bipolar Zero Error 10V Range 10 mV
Bipolar Zero Error Drift 10V Range 0.5 ppm/C
(3)
Unipolar Zero Error 0V to 5V, 0V to 4V Ranges 3 mV
Unipolar Zero Error Drift 0V to 5V, 0V to 4V Ranges 0.5 ppm/C
Recovery Time to Rated Accuracy 2.2 F Capacitor to CAP 1 ms
(5)
from Power-Down
Power-Supply Sensitivity +4.75V < V < +5.25V 0.5 LSB
S
(V = V = V )
DIG ANA S
ADS7806
2
SBAS021B
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