1N4448W Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 1N4448W FAST SWITCHING DIODE FEATURES MARKING: T5 Maximum Ratings and Electrical Characteristics, Single Diode Ta=25 Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage V 100 V RM Peak Repetitive Peak Reverse Voltage V RRM Working Peak Reverse Voltage V 75 V RWM DC Blocking Voltage V R RMS Reverse Voltage V 53 V R(RMS) I 500 mA Forward Continuous Current FM Average Rectified Output Current I 250 mA O Peak Forward Surge Current t=1.0s 4.0 I A FSM 1.5 t=1.0s Power Dissipation Pd 500 mW Thermal Resistance Junction to R 250 JA /W Ambient Storage Temperature and Junction Temperature T -55~+150 STG/Tj Electrical Ratings Ta=25 Parameter Symbol Min Typ Max Unit Conditions Reverse Breakdown Voltage V 75 V IR=10A (BR)R V 0.62 0.72 V I =5mA F1 F V 0.855 V I =10mA F2 F Forward Voltage V 1.0 V I =100mA F3 F V 1.25 V I =150mA F4 F I 2.5 A V =75V R1 R Reverse Current I 25 nA V =20V R2 R Capacitance Between Terminals C 4 pF V =0V,f=1MHz T R I =I =10mA F R Reverse Recovery Time t 4 ns rr Irr=0.1XI ,R =100 R L C,Jul,2012Typical Characteristics 1N4448W Forward Characteristics Reverse Characteristics 10000 300 100 3000 T =100 a 1000 30 300 10 100 3 T =25 a 30 1 10 0.3 3 0.1 1 0.0 0.4 0.8 1.2 1.6 0 2040 6080 100 FORWARD VOLTAGE V (V) F REVERSE VOLTAGE V (V) R Capacitance Characteristics Power Derating Curve 1.6 600 T =25 a f=1MHz 500 1.4 400 1.2 300 1.0 200 0.8 100 0.6 0 04 8 12 16 20 0 25 50 75 100 125 150 REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE T () R a C,Jul,2012 T =100 a T =25 a CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T REVERSE CURRENT I (nA) POWER DISSIPATION P (mW) R D