1N4448WT Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Plastic-Encapsulate SOD-523 Diodes 1N4448WT FAST SWITCHING DIODE SOD-523 FEATURES Small Package Low Reverse Current Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion MARKING: T5 The marking bar indicates the cathode Solid dot = Green molding compound device, T5 if none,the normal device. Maximum Ratings and Electrical Characteristics, Single Diode Ta=25 Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage V 100 V RM Peak Repetitive Peak Reverse Voltage V RRM Working Peak Reverse Voltage V 75 V RWM DC Blocking Voltage V R RMS Reverse Voltage V 53 V R(RMS) Forward Continuous Current I mA FM 500 Average Rectified Output Current I mA O 250 I FSM 2.0 A Non-Repetitive Peak Forward Surge Current t=8.3ms Power Dissipation Pd mW 150 Thermal Resistance Junction toAmbient /W R 833 JA Junction Temperature T 150 j Storage Temperature T -55~+150 STG ELECTRICAL CHARACTERISTICS(T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit I =5A Reverse voltage V R 75 V (BR)1 I =100A Reverse voltage V R 100 V (BR)2 V =75V 1 A R Reverse current I R V =20V 25 nA R I =5mA V F 0.715 0.855 I =10mA V F V Forward voltage F I =100mA 1 V F 1.25 I =150mA F V Total capacitance C V =0V,f=1MHz 4 pF tot R Reverse recovery time t I = I =10mA, I =0.1*I ,R =100 4 ns rr F R rr R L www.cj-elec.com 1 C,Mar,2015Typical Characteristics Forward Characteristics Reverse Characteristics 300 10000 Pulsed Pulsed 100 T =100 a 1000 10 100 T =25 a 1 10 0.1 1 0.0 0.4 0.8 1.2 1.6 0 2040 6080 100 FORWARD VOLTAGE V (V) F REVERSE VOLTAGE V (V) R Capacitance Characteristics Power Derating Curve 1.4 200 T =25 a f=1MHz 1.2 150 1.0 100 0.8 50 0.6 0 04 8 12 16 20 0 25 50 75 100 125 150 REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE T () R a www.cj-elec.com 2 C,Mar,2015 T =100 a T =25 a CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T REVERSE CURRENT I (nA) POWER DISSIPATION P (mW) R D