B0530WS SE Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 B0520WS/B0530WS/B0540WS SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z High Conductance z Also Available in Lead Free Version MARKING: B0520WS: SD B0530WS: SE B0540WS: SF Maximum Ratings Ta=25 Parameter Symbol B0520WSB0530WS B0540WS Unit Peak repetitive peak reverse voltage V RRM Working peak reverse voltage V 20 30 40 V RWM V DC blocking voltage R RMS reverse voltage reverse voltage (DC) V 14 21 28 V R(RMS) Average rectified output current I 0.5 A o Forward current surge peak I 5.5 A FSM Power dissipation P 200 mW D Thermal resistance junction to ambient R 500 /W JA Junction temperature T 125 j Storage temperature T -55~+150 STG Voltage rate of change dv/dt 1000 V/ s Electrical Characteristics Ta=25 Parameter Symbol B0520WSB0530WSB0540WSUnit Conditions 20 -- -- I =250A R Minimum reverse b- V -- 30 -- V I =500A (BR) R reakdown voltage -- -- 40 I =20A R V 0.33 0.36 -- I =0.1A F1 F Forward voltage V 0.39 0.45 0.510 V I =0.5A F2 F V -- -- 0.62 I =1A F3 F I 75 -- -- V =10V R1 R Reverse current A I -- 80 -- V =15V R2 R I 250 100 10 V =20V R3 R Reverse current I -- 500 -- A V =30V R4 R I -- -- 20 V =40V R5 R Capacitance between terminals C 170 170 170 pF V =0,f=1MHz T R C,Apr,2013B0540WS Typical Characteristics Reverse Characteristics Forward Characteristics 1000 3000 1000 T =100 a 100 100 10 10 T =25 a 1 1 0.1 0.1 0 200 400 600 800 010 20 30 40 FORWARD VOLTAGE V (mV) REVERSE VOLTAGE V (V) F R Power Derating Curve Capacitance Characteristics 120 300 T =25 a f=1MHz 100 80 200 60 40 100 20 0 0 0 5 10 15 20 25 30 0 25 50 75 100 125 AMBIENT TEMPERATURE T ( ) REVERSE VOLTAGE V (V) a R C,Apr,2013 T =100 a T =25 a CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T POWER DISSIPATION P (mW) REVERSE CURRENT I (uA) D R