JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes BAS16X Swithching Diode SOD-523 FEATURES z High-Speed Switching Applications z Lead Finish: 100% Matte Sn ( Tin ) z Qualified Reflow Temperature: 260 z Extremely Small SOD-523 Package MARKING: A6 The marking bar indicates the cathode Solid dot = Green molding compound device,if none,the normal device. ( MAXIMUM RATINGS T =25 unless otherwise noted ) a Symbol Parameter Value Unit Reverse Voltage V R 75 V Forward Continuous Current 200 mA I F I Non-repetitive Peak Forward Surge Current t= 8.3ms 2 A FSM P Power Dissipation 150 mW D R Thermal Resistance from Junction to Ambient 833 /W JA Junction Temperature 150 T j T Storage Temperature -55~+150 stg Electrical Ratings Ta=25 Parameter SymbolMinTypMaxUnit Conditions Reverse breakdown voltage V 75 I =100uA (BR) R V 715 I =1mA F1 F V 855 I =10mA F2 F Forward voltage mV V 1000 I =50mA F3 F V 1250 I =150mA F4 F Reverse recovery Time t 6.0 ns I =I =10mAdc,R =50 F R L rr Reverse current I 1.0 A V =75V R R V 1.75 V I =10mA, t = 20ns Forward recovery voltage F r FR 2.0 pF V =0V,f=1MHZ Diode capacitance C R D Stored charge Q 45 pC I =10mA, V =5.0V ,R =500 F R L S www.cj-elec.com 1 D,Mar,2015 A6 A6Typical Characteristics Forward Characteristics Reverse Characteristics 150 1000 100 T =100 a 10 100 1 10 T =25 a 0.1 0.01 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 020 40 60 80 FORWARD VOLTAGE V (V) REVERSE VOLTAGE V (V) F R Power Derating Curve Capacitance Characteristics 1.2 200 T =25 a f=1MHz 150 1.0 100 50 0.8 0 0 5 10 15 20 0 25 50 75 100 125 150 REVERSE VOLT AGE V (V) AMBIENT TEMPERATURE T ( ) R a www.cj-elec.com 2 D,Mar,2015 T =100 a T =25 a FORWARD CURRENT I (mA) CAPACITANCE BETWEEN TERMINALS F C (pF) T POWER DISSIPATION P (mW) REVERSE CURRENT I (nA) D R