BAS21W Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode BAS19W/20W/21W SWITCHING DIODE SOT-323 FEATURES z Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z For General Purpose Switching Applications z High Conductance MARKING: 1 BAS19W:KA8 BAS20W:KT2 BAS21W:KT3 3 2 KA8 KT3 KT2 KT3 KA8 KT2 Solid dot = Green molding compound device, if none,the normal device. Maximum Ratings Ta=25 Parameter Symbol BAS19W BAS20W BAS21W Unit Peak Repetitive Reverse Voltage V RRM V 100 150 250 DC Blocking Voltage V R Average Rectified Output Current I mA O 200 Non-Repetitive Peak Forward Surge Current A I 2.5 FSM t=8.3ms Power Dissipation 200 mW P D Thermal Resistance Junction to Ambient 625 /W R JA T Junction Temperature J 150 Storage Temperature Range T -55~+150 STG ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Reverse breakdown voltage BAS19W 100 BAS20W V I = 100A 150 V (BR) R BAS21W 250 BAS19W V =100V R Reverse voltage leakage current BAS20W I V =150V 0.1 A R R BAS21W V =200V R I =100mA 1 F Forward voltage V V F I =200mA 1.25 F Diode capacitance C V =0V, f=1MHz 5 pF D R Reveres recovery time t I =I =30mA,I =0.1I 50 ns rr F R rr R www.cj-elec.com 1 C,Oct,2014 IURPTypical Characteristics Forward Characteristics Reverse Characteristics 1000 200 100 T =100 a 100 10 10 1 T =25 a 1 0.1 0.01 0.1 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 FORWARD VOLTAGE V (V) REVERSE VOLTAGE V (V) F R Power Derating Curve Capacitance Characteristics Per Diode 250 5 T =25 a f=1MHz 200 150 1 100 50 0.1 0 04 8 12 16 20 0 25 50 75 100 125 150 REVERSE VOLT AGE V (V) AMBIENT TEMPERATURE T ( ) R j www.cj-elec.com 2 C,Oct,2014 T =100 a T =25 a CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T POWER DISSIPATION P (mW) REVERSE CURRENT I (nA) D R