BAV170 Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAV170 Switching Diode SOT-23 FEATURES Low Leakage Current High Switching Speed APPLICATION Low-leakage Current Applications in Surface Mounted Circuits MARKING:JX - JX + + MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Symbol Parameter Value Unit V Repetitive Peak Reverse Voltage 85 V RRM V DC Blocking Voltage 75 V R Forward Current(single diode ) 215 I mA F Forward Current(double diode ) 125 I Repetitive Peak Forward Current 500 mA FRM I Non-repetitive Peak Forward Surge Current t =8.3ms 1.0 A FSM P Power Dissipation 250 mW D R Thermal Resistance from Junction to Ambient 500 JA /W T Junction Temperature 150 j T Storage Temperature -55~+150 stg ELECTRICAL CHARACTERISTICS(T =25unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V I =100A 75 V (BR) R Reverse current IR VR=75V 5 nA IF=1mA 0.9 IF=10mA 1 Forward voltage VF V IF=50mA 1.1 IF=150mA 1.25 Total capacitance C VR=0,f=1MHz 2 pF tot Reverse recovery time t I = I =10mA, I =0.1I , R =100 3 s rr F R rr R L www.cj-elec.com 1 B,Oct,2014Typical Characteristics Reverse Characteristics Forward Characteristics 0.8 500 100 T =100 a 0.6 T =25 a 10 0.4 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1734 5168 85 FORWARD VOLTAGE V (V) REVERSE VOLTAGE V (V) F R Capacitance Characteristics Power Derating Curve 2.5 300 T =25 a f=1MHz 250 2.0 200 1.5 150 1.0 100 0.5 50 0.0 0 0 5 10 15 20 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta () REVERSE VOLTAGE V (V) R www.cj-elec.com 2 B,Oct,2014 T =100 a T =25 a CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) C (pF) F T POWER DISSIPATION P (mW) REVERSE CURRENT I (nA) D R