BAV199 Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAV199 SWITCHING DIODE SOT-23 FEATURES z This Switching Diode has The Following Features: z Low Leakage Current Applications 1 Marking: JY 3 2 Solid dot = Green molding compound device, JY JY if none, the normal device Maximum Ratings Ta=25 Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltag e V 70 V RM DC Blocking Voltage V 70 V R Forward Continuous Current I 500 mA FM Average Rectified Output Current I 215 mA O Non-Repetitive Peak Forward Surge Current IFSM 1.0 A t=8.3ms 200 Power Dissipation P mW D Junction Temperature T 150 J -55~+150 Storage Temperature Range T STG ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Reverse breakdown voltage V 70 V (BR) I = 100A R Reverse voltage leakage current I V=70V 5 nA R R I =1mA 900 F I =10mA 1000 F V mV Forward voltage F I =50mA 1100 F I =150mA 1250 F Diode capacitance C V =0, f=1MHz 2 D R pF t Reverse recovery time r r 3 I = I =10mA s F R www.cj-elec.com 1 B,Oct,2014Typical Characteristics Reverse Characteristics Forward Characteristics 0.8 500 100 T =100 a 0.6 T =25 a 10 0.4 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1428 4256 70 FORWARD VOLTAGE V (V) REVERSE VOLTAGE V (V) F R Capacitance Characteristics Power Derating Curve 2.5 250 T =25 a f=1MHz 2.0 200 1.5 150 1.0 100 0.5 50 0.0 0 0 5 10 15 20 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta () REVERSE VOLTAGE V (V) R www.cj-elec.com 2 B,Oct,2014 T =100 a T =25 a CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T POWER DISSIPATION P (mW) REVERSE CURRENT I (nA) D R