BAV23A Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Plastic-Encapsulate SOT-23 Diodes SWITCHING DIODE BAV23A/C/S SOT-23 FEATURES z Fast Switching Speed z High Conductance z For General Purpose Switching Applications BAV23A BAV23C BAV23S MARKING: KT7 MARKING: KT6 MARKING:KL31 KT7 KT6 KL31 Solid dot = Green molding compound device, the normal device if none, KT7 KT6 KL31 MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Symbol Parameter Value Unit Peak Repetitive Reverse Voltage V RRM V 250 V RWM Working Peak Reverse Voltage V RMS Reverse Voltage 175 V R(RMS) I Average Rectified Output Current 225 mA O I 1.7 A FSM Non-repetitive Peak Forward Surge Current t = 8.3ms P Power Dissipation 350 mW D R Thermal Resistance from Junction to Ambient 357 /W JA T Junction Temperature 150 j T Storage Temperature -55~+150 stg ELECTRICAL CHARACTERISTICS(T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit V I =100A 250 V Reverse voltage (BR) R Reverse current I V=250V 0.1 A R R I=100mA 1 F Forward voltage V V F I=200mA 1.25 F Total capacitance C V=0V,f=1MHz 5 pF tot R t I = I =30mA, I =0.1I , R =100 50 ns Reverse recovery time rr F R rr R L www.cj-elec.com 1 D,Jun,2014Typical Characteristics Forward Characteristics Reverse Characteristics 1000 300 Pulsed Pulsed 100 T =100 a 10 100 1 10 T =25 a 0.1 0.01 1 0.2 0.4 0.6 0.8 1.0 1.2 0 50 100 150 200 250 FORWARD VOLTAGE V (V) REVERSE VOLTAGE V (V) F R Power Derating Curve Capacitance Characteristics 1.6 400 T =25 a f=1MHz 350 1.4 300 250 1.2 200 1.0 150 100 0.8 50 0.6 0 04 8 12 16 20 0 25 50 75 100 125 150 REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE T () R a www.cj-elec.com 2 D,Jun,2014 T =100 a T =25 a CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T REVERSE CURRENT I (nA) POWER DISSIPATION P (mW) R D