X-On Electronics has gained recognition as a prominent supplier of BTA08-800CW Triacs across the USA, India, Europe, Australia, and various other global locations. BTA08-800CW Triacs are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

BTA08-800CW Changjing Electronics Technology

BTA08-800CW electronic component of Changjing Electronics Technology
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Part No.BTA08-800CW
Manufacturer: Changjing Electronics Technology
Category: Triacs
Description: Thyristors - TRIACs TO-220AK RoHS
Datasheet: BTA08-800CW Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2608 ea
Line Total: USD 0.26 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 0.2608
10 : USD 0.2554
30 : USD 0.2517
100 : USD 0.2483

   
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We are delighted to provide the BTA08-800CW from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BTA08-800CW and other electronic components in the Triacs category and beyond.

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220 AK Plastic-Encapsulate T hyristors BTA08 3Q TRIACs MAIN CHARACTERISTICS I 8A T(RMS) TO-220AK 600V BTA08 -600(T/S/C)W V /V DRM RRM BTA0 8-800(T/S/C)W 800V V 1.55V TM 1.MAIN TERMINAL 1 2.MAIN TERMINAL 2 FEATURES 3.GATE NPNPN 5-layer Structure TRIACs Mesa Glass Passivated Technology Multi Layers Metal Electrodes High Junction Temperature Good Commutation Performance High dV/dt and dI/dt Insulating Voltage=2500V(RMS) MARKING APPLICATIONS BTA08:Series Code Heater Control 600CW:Depends on VDRM Motor Speed Controller and IGT Mixer XXX:Internal Code ABSOLUTE RATINGS ( T =25 unless otherwise noted ) a Symbol Parameter Test condition Value Unit BTA08-600 (T/S/C)W 600 Repetitive peak off- V V / V DRM RRM Tj=25 state voltage V BTA08-800 (T/S/C)W 800 I RMS on-state current 8 A T(RMS) TO-220AK(T 100)Fig. 1,2 C Non repetitive surge Full sine waveT (init)=25, j I 80 A TSM peak on-state current tp=20ms Fig. 3,5 2 2 2 I t I t value tp=10ms 36 A s Critical rate of rise of I =2*I , tr10ns, F=120H , G GT Z dI /dt -- 50 A/s T T =125 on-state current j I Peak gate current 4 A GM tp=20s, T =125 j P Average gate power T =125 1 W G(AV) j -40~+150 T Storage temperature STG Operating junction T j -40~+125 temperature www.jscj-elec.com 1 Rev. - 1.0ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Value Symbol Parameter Test condition Unit TW SW CW V =12V, D I Gate trigger current -- 5 10 35 mA GT R =30, L T =25, j V Gate trigger voltage -- 1.3 V GT Fig. 6 Non-triggering gate V 0.2 V GD V =V , T =125 D DRM j voltage I Holding current I =100mAFig. 6 10 15 35 mA H T - 10 25 50 mA I =1.2I , G GT Latching current I L Fig. 6 15 30 60 mA V =67%V , Gate Critical rate of rise D DRM dV /dt 20 40 400 V/s D Open T =125 of off-state j I =11A tp=380s , TM V 1.55 V TM On-state Voltage Fig. 4 V =V /V , T =25 5 5 5 A D DRM RRM j Repetitive peak off- I / I DRM RRM state current V =V /V ,T =125 1.0 1.0 1.0 mA D DRM RRM j THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-c) Junction to case (AC) TO-220AK 2.5 /W Rth (j-a) Junction to ambient TO-220AK 60 /W PART NUMBER BT A 08 -600 C W 3 Quadrant TRIACs T I 5mA GT1-3 SI 10mA A:insulation GT1-3 C I 35mA GT1-3 Repetitive peak off-state voltage I =8A T(RMS) 600 600V 800 800V www.jscj-elec.com 2 Rev. - 1.0

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
CJ
Jiangsu Changjing Electronics Technology
Jiangsu Changjing Electronics Technology Co., Ltd.
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