JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-3PK Plastic-Encapsulate T hyristors BTA41 3Q TRIACs MAIN CHARACTERISTICS I 40A T(RMS) TO-3PK BTA41-600(C/B)W 600V V /V DRM RRM BTA41-800(C/B)W 800V V 1.55V TM 1.MAIN TERMINAL 1 2.MAIN TERMINAL 2 FEATURES 3.GATE NPNPN 5-layer Structure TRIACs Mesa Glass Passivated Technology Multi Layers Metal Electrodes High Junction Temperature Good Commutation Performance High dV/dt and dI/dt Insulating Voltage=2500V(RMS) MARKING APPLICATIONS BTA41:Series Code Heater Control 600CW:Depends on VDRM Motor Speed Controller and IGT Mixer XXX:Internal Code ABSOLUTE RATINGS ( T =25 unless otherwise noted ) a Symbol Parameter Test condition Value Unit 600 BTA41-600( C/B)W Repetitive peak off- V V / V DRM RRM Tj=25 state voltage V 800 BTA41-800( C/B)W I RMS on-state current 40 A T(RMS) TO-3PK(T 80 )Fig. 1,2 C Non repetitive surge Full sine waveT (init)=25, j 400 I A TSM peak on-state current tp=20ms Fig. 3,5 2 2 2 I t I t value tp=10ms 1000 A s Critical rate of rise of I =2*I , tr10ns, F=120H , G GT Z dI /dt -- 50 A/s T T =125 on-state current j I Peak gate current 8 A GM tp=20s, T =125 j P Average gate power T =125 1 W G(AV) j -40~+150 T Storage temperature STG Operating junction T j -40~+125 temperature www.jscj-elec.com 1 Rev. - 1.0ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Value Symbol Parameter Test condition Unit CW BW V =12V, D I Gate trigger current -- 35 50 mA GT R =33, L T =25, j V Gate trigger voltage -- 1.3 V GT Fig. 6 Non-triggering gate V 0.2 V GD V =V , T =125 D DRM j voltage I Holding current I =500mAFig. 6 50 mA H T 75 - 60 mA 80 I =1.2I , G GT Latching current I L Fig. 6 80 mA 100 V =67%V , Gate Critical rate of rise D DRM dV /dt 500 V/s D 1000 Open T =125 of off-state j I =60A tp=380s , TM V 1.55 V TM On-state Voltage Fig. 4 V =V /V , T =25 5 5 A D DRM RRM j Repetitive peak off- I / I DRM RRM state current 4.0 V =V /V ,T =125 4.0 mA D DRM RRM j THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-c) Junction to case (AC) TO-3PK 0.9 /W Rth (j-a) Junction to ambient TO-3PK 50 /W PART NUMBER BT A 41 -600 C W 3 Quadrant TRIACs A:insulation CI 35mA GT1-3 BI 50mA GT1-3 Repetitive peak off-state voltage I =40A T(RMS) 600 600V 800 800V www.jscj-elec.com 2 Rev. - 1.0