X-On Electronics has gained recognition as a prominent supplier of CT316R-800S Triacs across the USA, India, Europe, Australia, and various other global locations. CT316R-800S Triacs are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

CT316R-800S Changjing Electronics Technology

CT316R-800S electronic component of Changjing Electronics Technology
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Part No.CT316R-800S
Manufacturer: Changjing Electronics Technology
Category: Triacs
Description: Thyristors - TRIACs TO-262K RoHS
Datasheet: CT316R-800S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5683 ea
Line Total: USD 0.57 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 11 Dec to Mon. 16 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5683
10 : USD 0.4652
30 : USD 0.422
100 : USD 0.3657
500 : USD 0.3414
1000 : USD 0.3264

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Holding Current Ih
Gate Trigger Currentigt
Peak Forward On State Voltage Vtm
Average Gate Power Dissipation Pgav
Rms On-State Currentit Rms
Peak Repetitive Off State Voltage Vdrm
Operating Temperature
Peak Non-Repetitive Surge Current Itsm@F
Scr Type
Gate Trigger Voltage Vgt
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CT316R-800S from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CT316R-800S and other electronic components in the Triacs category and beyond.

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-262K Plastic-Encapsulate T hyristors 3Q TRIACs CT316R MAIN CHARACTERISTICS I 16A T(RMS) TO-262K CT316R-600S/C/B 600V V /V DRM RRM CT316R-800S/C/B 800V V 1.55V TM 1.MAIN TERMINAL 1 2.MAIN TERMINAL 2 3.GATE FEATURES NPNPN 5-layer Structure TRIACs Mesa Glass Passivated Technology Multi Layers Metal Electrodes High Junction Temperature Good Commutation Performance High dV/dt and dI/dt APPLICATIONS MARKING Heater Control CT31 6R:Series Code Motor Speed Controller 600S:Depends on VDRM Mixer and IGT XXX:Internal Code ABSOLUTE RATINGS ( T =25 unless otherwise noted ) a Symbol Parameter Test condition Value Unit CT316R-600S/C/B 600 Repetitive peak off- V V / V DRM RRM Tj=25 state voltage V CT316R-800S/C/B 800 I RMS on-state current 16 A T(RMS) TO-262 K(T 100)Fig. 1,2 C Non repetitive surge Full sine waveT (init)=25, j I 160 A TSM peak on-state current tp=20ms Fig. 3,5 2 2 2 I t I t value tp=10ms 140 A s Critical rate of rise of I =2*I , tr10ns, F=120H , G GT Z -- 50 dI /dt A/s T T =125 on-state current j n/a I Peak gate current 4 A GM tp=20s, T =125 j P Average gate power T =125 1 W G(AV) j -40~+150 T Storage temperature STG Operating junction T j -40~+125 temperature www.jscj-elec.com 1 Rev. - 1.0ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Value Symbol Parameter Test condition Unit S C B V =12V, D 10 35 50 -- I Gate trigger current mA GT R =33 , L n/a n/a n/a T =25, j V Gate trigger voltage -- 1.3 V GT Fig. 6 Non-triggering gate V 0.2 V GD V =V , T =125 D DRM j voltage I Holding current 15 30 50 mA H I =500mA, Fig. 6 T - 25 50 70 mA I =1.2IGT G Latching current I L 30 60 80 mA Fig. 6 V =67%V , Gate Critical rate of rise D DRM dV /dt 40 500 1000 V/s D Open T =125 of off-state j I =23Atp=380s , TM V 1.55 V TM On-state Voltage Fig. 4 V =V /V , T =25 5 5 5 A D DRM RRM j Repetitive peak off- I / I DRM RRM state current V =V /V ,T =125 1 1 1 mA D DRM RRM j THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-c) Junction to case (AC) 1.2 /W TO-262 K Rth (j-a) Junction to ambient TO-262 K 45 /W PART NUMBER CT 3 R C 16 -600 BI 50mA GT1-3 TRIACs CI 35mA GT1-3 SI GT1-310mA 3 Quadrant Repetitive peak off-state voltage 600 600V I =16A T(RMS) 800 800V Package Type www.jscj-elec.com 2 Rev. - 1.0

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
CJ
Jiangsu Changjing Electronics Technology
Jiangsu Changjing Electronics Technology Co., Ltd.
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