MBR30200CT Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Diodes MBR30200CT SCHOTTKY BARRIER RECTIFIER TO-220-3L FEATURES 1. ANODE z Schottky Barrier Chip 2. CATHODE z Guard Ring Die Construction for Transient Protection 3. ANODE z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Symbol Parameter Value Unit V Peak repetitive reverse voltage RRM 200 V V Working peak reverse voltage RWM V DC blocking voltage R V RMS reverse voltage 140 V R(RMS) Average rectified output current 30 A I O Non-Repetitive peak forward surge current I 200 A FSM 8.3ms half sine wave P Power dissipation 2 W D R Thermal resistance from junction to ambient 50 JA /W Junction temperature 125 T j T Storage temperature -55~+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V I=1mA 200 V (BR) R I V=200V 100 A Reverse current R R V I=15A 1 V Forward voltage F1 F Forward voltage V* I=30A 1.1 V F2 F Typical total capacitance C V=4V,f=1MHz 800 pF tot R www.cj-elec.com 1 E,Aug,2015Typical Characteristics Forward Characteristics Reverse Characteristics 1000 30000 10000 100 1000 10 100 1 10 0.1 1 0.01 1 0 100 200 300 400 500 600 700 800 900 1000 1100 25 50 75 100 125 150 175 200 REVERSE VOLTAGE V (V) FORWARD VOLTAGE V (mV) R F Capacitance Characteristics Power Derating Curve 400 2.5 T =25 a f=1MHz 2.0 300 1.5 200 1.0 100 0.5 0 0.0 0 5 10 15 20 25 30 35 0 25 50 75 100 125 REVERSE VOLTAGE V (V) R AMBIENT TEMPERATURE T ( ) a www.cj-elec.com 2 E,Aug,2015 T =100 a T =25 a T =100 a T =25 a CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T REVERSE CURRENT I (uA) POWER DISSIPATION P (W) R D