MMBD4148SE Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 MMBD4148A/SE/CC/CA SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance MARKING: MMBD4148A:5H MMBD4148CA :D6 MMBD4148CC :D5 MMBD4148SE :D4 Maximum Ratings Ta=25 Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltag e V 100 V RM Peak Repetitive Peak Reverse Voltage V RRM Working Peak Reverse Voltage V 100 V RWM DC Blocking Voltage V R RMS Reverse Voltage V 53 V R(RMS) Forward Continuous Current I 300 mA FM Average Rectified Output Current I 200 mA O Peak Forward Surge Current t=1.0s 2.0 I A FSM t=1.0s 1.0 Power Dissipation P 350 mW D Thermal Resistance Junction to Ambient R 357 /W JA Junction Temperature T 150 j Storage Temperature T -55~+150 STG Electrical Ratings Ta=25 Parameter Symbol Min Typ Max Unit Conditions V 100 V I =100A (BR) 1 R Reverse breakdown voltage V 75 V I =5A (BR) 2 R Forward voltage V 1 V I =10mA F F I 5 A V =75V R1 R Reverse current I 25 nA V =25V R2 R Capacitance between terminals C 4 pF V =0V,f=1MHz T R I =I =10mA, V =6V, F R R Reverse recovery time t 4 ns rr Irr=0.1XI ,R =100 R L A,May,2011Typical Characteristics MMBD4148SE Forward Characteristics Reverse Characteristics 1000 300 100 300 Ta=100 30 100 10 30 3 10 Ta=25 1 3 0.3 0.1 1 0.0 0.4 0.8 1.2 1.6 0 20406080 FORWARD VOLTAGE V (V) REVERSE VOLTAGE V (V) F R Capacitance Characteristics Semiconductor Intrinsic Property 1.4 300 Ta=25 f=1MHz 250 1.3 200 1.2 150 100 1.1 50 1.0 0 0 5 10 15 20 0 25 50 75 100 125 150 175 REVERSE VOLTAGE V (V) R AMBIENT TEMPERATURE Ta () Power Derating Curve 400 300 200 100 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta () A,May,2011 Ta=100 Ta=25 CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) POWER DISSIPATION P (mW) F D C (pF) T AVERAGE RECTIFIED CURRENT REVERSE CURRENT I (nA) R I (mA) F(AV)