MMSD914 Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 MMSD914 SMALL SIGNAL DIODE FEATURES High Voltage MARKING: 5D MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Symbol Parameter Value Unit V Maximum Repetitive Reverse Voltage 100 V RRM I Forward Current 0.2 O A Non-repetitive Peak Forward Surge Current t=1ms 2 IFSM Power Dissipation 400 mW P D Thermal Resistance from Junction to Ambient 312 R /W JA T Junction Temperature 150 j T Storage Temperature -55~+150 stg ELECTRICAL CHARACTERISTICS(T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit I =5A 75 V R V Reverse voltage (BR) I =100A 100 V R V =20V 25 nA R Reverse current I R V =75V 5 A R Forward voltage V I =10mA 1 V F F Total capacitance C V =0V,f=1MHz 4 pF tot R Reverse recovery time t I = I =30mA, I =0.1I , R =100 4 ns rr F R rr R L A,May,2011Typical Characteristics MMSD914 Forward Characteristics Reverse Characteristics 10000 300 100 3000 Ta=100 1000 30 300 10 100 3 Ta=25 30 1 10 0.3 3 0.1 1 0.0 0.4 0.8 1.2 1.6 0 2040 6080 100 FORWARD VOLTAGE V (V) F REVERSE VOLTAGE V (V) R Capacitance Characteristics Power Derating Curve 1.6 600 Ta=25 f=1MHz 500 1.4 400 1.2 300 1.0 200 0.8 100 0.6 0 04 8 12 16 20 0 25 50 75 100 125 150 REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE T () R a A,May,2011 Ta=100 Ta=25 CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T REVERSE CURRENT I (nA) POWER DISSIPATION P (mW) R D