RB550V-30 SS Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 RB550V-30 Schottky Barrier Diode FEATURES z Small Surface Mounting Type z Low and IV F R z High Reliability APPLICATIONS z General Rectification MARKING: SS MAXIMUM RATINGS (T =25 unless otherwise noted ) a Symbol Parameter Value Unit V Non-Repetitive Peak Reverse Voltage 30 V RM I Continuous Forward Current 1 A O I Forward Peak Surge Current =8.3ms 3 A FSM P Power Dissipation 200 mW D R Thermal Resistance From Junction To Ambient 500 /W JA T Junction Temperature 125 j T Storage Temperature -55+150 stg ELECTRICAL CHARACTERISTICS(T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit 30 Reverse voltage V I1mA V (BR) R Reverse current I V10V 0.03 mA R R I700mA 0.49 F Forward voltage V V F I1A 0.52 F D,Nov,2013 = = = =Typical Characteristics RB550V-30 Forward Characteristics Reverse Characteristics 1000 10000 1000 100 100 10 10 1 1 0.1 0.1 0.1 0 100 200 300 400 500 5 1015202530 REVERSE VOLTAGE V (V) FORWARD VOLTAGE V (mV) R F Capacitance Characteristics Power Derating Curve 200 250 T =25 a f=1MHz 200 150 150 100 100 50 50 0 0 02 46 8 10 0 25 50 75 100 125 REVERSE VOLTAGE V (V) R AMBIENT TEMPERATURE T ( ) a D,Nov,2013 T =100 a T =25 a T =100 a T =25 a CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T REVERSE CURRENT I (uA) POWER DISSIPATION P (mW) R D