X-On Electronics has gained recognition as a prominent supplier of 1.5KE6.8A-G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. 1.5KE6.8A-G ESD Suppressors / TVS Diodes are a product manufactured by Comchip. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

1.5KE6.8A-G Comchip

1.5KE6.8A-G electronic component of Comchip
1.5KE6.8A-G Comchip
1.5KE6.8A-G ESD Suppressors / TVS Diodes
1.5KE6.8A-G  Circuit Protection

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See Product Specifications
Part No. 1.5KE6.8A-G
Manufacturer: Comchip
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 1500W, 6.8V,Unidir
Datasheet: 1.5KE6.8A-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
237: USD 0.2875 ea
Line Total: USD 68.14 
Availability - 345
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ: 237  Multiples: 1
Pack Size: 1
Availability Price Quantity
345
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 237
Multiples : 1
237 : USD 0.2875
240 : USD 0.2846
242 : USD 0.2818
271 : USD 0.2517
506 : USD 0.135

2508
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 0.335
25000 : USD 0.3257

345
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 242
Multiples : 1
242 : USD 0.2818
271 : USD 0.2517
506 : USD 0.135

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Vf - Forward Voltage
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 1.5KE6.8A-G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1.5KE6.8A-G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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1500W Transient Voltage Suppressor 1.5KE-G Series Breakdown Voltage: 6.8 to 600 Volts Peak Pulse Power: 1500 Watts RoHS Device Features DO-201 - Glass passivated chip. - 1500W peak pulse power capability with a 10/1000s waveform, repetitive rate (duty cycle):0.01% - Low leakage. - Uni and Bidirectional unit. 1.000(25.40) Min. - Excellent clamping capability. - Very fast response time. R - UL recognized file E349157 0.375(9.53) - Range: 1.5KE6.8(C)A thru. 1.5KE120(C)A 0.285(7.24) 0.209(5.30) DIA. Mechanical Data 0.189(4.79) DIA. -Case: Molded plastic DO-201 1.000(25.40) Min. -Epoxy: UL 94V-0 rate flame retardant -Lead: Solderable per MIL-STD-202, method 208 guranteed. 0.042(1.07) DIA. 0.038(0.97) DIA. -Polarity: Color band denotes cathode end except Bipolar. -Mounting position: Any Dimensions in inches and (millimeter) -Weight: 0.844 gram (approx.) Maximum Ratings (TA=25C unless otherwise noted) Symbol Parameter Value Unit Peak power dissipation with a 10/1000 s PPP W 1500 waveform (Note 1) Peak pulse current with a 10/1000 s waveform IPP See Next Table A (Note 1) Power dissipation on infinite heatsink at TL=75C PD 6.5 W Peak forward surge current, 8.3ms single half sine-wave unidirectional only IFSM 200 A (JEDEC method) (Note 2) Maximum instantaneous forward voltage at VF 3.5/5.0 V 100 A for unidirectional only (Note 3) Operating junction and storage TJ, TSTG -55 to +150 C temperature range NTOES: (1) Non-repetitive current pulse, per fig.5 and derated above TA=25C per fig.1 (2) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum (3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V Company reserves the right to improve product design , functions and reliability without notice. REV:D QW-BTV07 Page 1 Comchip Technology CO., LTD.1500W Transient Voltage Suppressor RATING AND CHARACTERISTIC CURVES (1.5KE6.8-G Thru. 1.5KE600-G) Fig.1 - Pulse Derating Curve Fig.2 - Max. Non-repetitive Surge Current 100 200 8.3ms single half sine-wave TJ = TJ max. 80 160 60 120 40 80 20 40 0 0 1 10 100 0 25 50 75 100 125 150 175 Ambient Temperature, TA (C) Number of Cycles at 60Hz Fig.3 - Steady State Power Derating Curve Fig.4 - Peak Pulse Power Rating Curve 8.0 100 7.0 6.0 10 5.0 4.0 3.0 1 2.0 1.0 0 0.1 0.1 1 10 100 1000 10000 0 25 50 75 100 125 150 175 200 Lead Temperature, TL (C) Pulse Width, td (s) Fig.5 - Pulse Waveform Fig.6 - Typical Junction Capacitance 125 100000 TJ = 25C Tr = 10 s Pulse width (td) is defined as the point where the peak Bi-directional current decays to 50% of IPP zero bias 100 Peak value IPP 10000 Uni-directional zero bias 75 1000 Uni-directional VRWM Half value = IPP/2 50 100 10/1000 s. Waveform as defined by R.E.A. Bi-directional VRWM 10 25 TJ=25C td f=1.0MHz 0 1 0 1 2 3 4 1 10 100 1000 Reverse Breakdown Voltage, VBR (V) Time, (ms) Company reserves the right to improve product design , functions and reliability without notice. REV:D QW-BTV07 Page 2 Comchip Technology CO., LTD. Peak Pulse Derating in % of Peak Pulse Current, (%) Steady State Power Dissipation, (W) Peak Power or Current, (%) Junction Capacitance, CJ (pF) Peak Power, (kW) Peak Forward Surge Current, (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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