X-On Electronics has gained recognition as a prominent supplier of 1N5401-G diodes - general purpose, power, switching across the USA, India, Europe, Australia, and various other global locations. 1N5401-G diodes - general purpose, power, switching are a product manufactured by Comchip. We provide cost-effective solutions for diodes - general purpose, power, switching, ensuring timely deliveries around the world.

1N5401-G Comchip

1N5401-G electronic component of Comchip
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See Product Specifications
Part No.1N5401-G
Manufacturer: Comchip
Category:Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching VR=100V, IO=3A
Datasheet: 1N5401-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.36 ea
Line Total: USD 0.36

Availability - 3402
Ships to you between
Fri. 14 Jun to Tue. 18 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1261 - WHS 1


Ships to you between Mon. 10 Jun to Fri. 14 Jun

MOQ : 702
Multiples : 1
702 : USD 0.1851
1000 : USD 0.1222

3402 - WHS 2


Ships to you between Fri. 14 Jun to Tue. 18 Jun

MOQ : 1
Multiples : 1
1 : USD 0.36
10 : USD 0.2748
100 : USD 0.1691
500 : USD 0.1587
1200 : USD 0.1208
2400 : USD 0.1139
9600 : USD 0.1046
24000 : USD 0.1046
49200 : USD 0.1012

1261 - WHS 3


Ships to you between Mon. 10 Jun to Fri. 14 Jun

MOQ : 702
Multiples : 1
702 : USD 0.1851

34920 - WHS 4


Ships to you between Mon. 10 Jun to Fri. 14 Jun

MOQ : 6000
Multiples : 1200
6000 : USD 0.5444
8400 : USD 0.4975
16800 : USD 0.4629
25200 : USD 0.4365

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Operating Temperature Range
Mxhts
Subcategory
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We are delighted to provide the 1N5401-G from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N5401-G and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

General Purpose Silicon Rectifiers 1N5400-G Thru. 1N5408-G Voltage: 50 to 1000 V Current: 3.0 A RoHS Device DO-27 (DO-201AD) Features -Low forward voltage drop. -High reliability. 0.052(1.32) DIA. -High current capability. 0.048(1.22) 1.000(25.40) Min. -High surge current capability. 0.375(9.53) Mechanical data 0.335(8.51) -Case: Molded plastic 0.220(5.60) DIA. 0.197(5.00) -Epoxy: UL 94V-0 rate flame retardant -Polarity: Color band denotes cathode end 1.000(25.40) Min. -Lead: Axial leads, solderable per MIL-STD-202, method 208 guaranteed -Mounting position: Any Dimensions in inches and (millimeter) -Weight: 1.2 grams Maximum Ratings and Electrical Characteristics (at TA=25C unless otherwise noted) Ratings at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 Parameter Symbol Unit -G -G -G -G -G -G -G Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current IF(AV) 3.0 A .375(9.5mm) Lead length TA=75C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load IFSM 200 A (JEDEC method) Maximum instantaneous forward voltage 3.0A VF 1.0 V TJ=25C 5.0 Maximum DC reverse current A IR at rated DC blocking voltage TJ=100C 100 Typical thermal resistance (Note 1) R JA 18 C/W Operating temperature range TJ -65 to +125 C Storage temperature range TSTG -65 to +150 C NOTES: 1. Thermal resistance from junction to ambient 0.375 (9.5mm) lead length. REV:A QW-BG015 Page 1General Purpose Silicon Rectifiers Rating and Characteristic Curves (1N5400-G Thru. 1N5408-G) Fig.1 - Maximum Forward Current Fig.2 - Typical Instantaneous Forward Derating Curve Characteristics Per Bridge Element 3.0 100 10 2.0 1 1.0 0.1 Single phase half wave 60Hz TJ =25C Resistive or inductive load Pulse width=300us 0.375 (9.5mm) lead length 1% Duty cycle 0 0.01 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Ambient Temperature, (C) Instantaneous Forward Voltage, (V) Fig.3 - Maximum Non-repetitive Forward Fig.4 - Typical Reverse Characteristics Surge Curren Per Bridge Element Per Bridge Element 200 10.0 TJ=100C 100 1.0 50 0.1 TJ=25C 8.3ms single half sine-wave (JEDEC Method) 0.01 10 1 10 100 0 20 40 60 80 100 120 140 Number of Cycles at 60Hz Percent of Rated Peak Reverse Voltage, (V) REV:A QW-BG015 Page 2 Peak Forward Surge Current, (A) Average Forward Current, (A) Instantaneous Reverse Current, (A) Instantaneous Forward Current, (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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