X-On Electronics has gained recognition as a prominent supplier of 1N5401-G Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. 1N5401-G Small Signal Switching Diodes are a product manufactured by Comchip. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

1N5401-G Comchip

1N5401-G electronic component of Comchip
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See Product Specifications
Part No.1N5401-G
Manufacturer: Comchip
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes VR=100V, IO=3A
Datasheet: 1N5401-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3443 ea
Line Total: USD 0.34 
Availability - 2819
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1260
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 776
Multiples : 1
776 : USD 0.1676
1000 : USD 0.1222

2819
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3443
10 : USD 0.2365
100 : USD 0.165
500 : USD 0.1342
1200 : USD 0.1188
2400 : USD 0.1012
9600 : USD 0.1001
24000 : USD 0.0957

1260
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 63
Multiples : 1
63 : USD 0.1676

34920
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 6000
Multiples : 1200
6000 : USD 0.5112
19200 : USD 0.4671
28800 : USD 0.4346

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 1N5401-G from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N5401-G and other electronic components in the Small Signal Switching Diodes category and beyond.

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General Purpose Silicon Rectifiers 1N5400-G Thru. 1N5408-G Voltage: 50 to 1000 V Current: 3.0 A RoHS Device DO-27 (DO-201AD) Features -Low forward voltage drop. -High reliability. 0.052(1.32) DIA. -High current capability. 0.048(1.22) 1.000(25.40) Min. -High surge current capability. 0.375(9.53) Mechanical data 0.335(8.51) -Case: Molded plastic 0.220(5.60) DIA. 0.197(5.00) -Epoxy: UL 94V-0 rate flame retardant -Polarity: Color band denotes cathode end 1.000(25.40) Min. -Lead: Axial leads, solderable per MIL-STD-202, method 208 guaranteed -Mounting position: Any Dimensions in inches and (millimeter) -Weight: 1.2 grams Maximum Ratings and Electrical Characteristics (at TA=25C unless otherwise noted) Ratings at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 Parameter Symbol Unit -G -G -G -G -G -G -G Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current IF(AV) 3.0 A .375(9.5mm) Lead length TA=75C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load IFSM 200 A (JEDEC method) Maximum instantaneous forward voltage 3.0A VF 1.0 V TJ=25C 5.0 Maximum DC reverse current A IR at rated DC blocking voltage TJ=100C 100 Typical thermal resistance (Note 1) R JA 18 C/W Operating temperature range TJ -65 to +125 C Storage temperature range TSTG -65 to +150 C NOTES: 1. Thermal resistance from junction to ambient 0.375 (9.5mm) lead length. REV:A QW-BG015 Page 1General Purpose Silicon Rectifiers Rating and Characteristic Curves (1N5400-G Thru. 1N5408-G) Fig.1 - Maximum Forward Current Fig.2 - Typical Instantaneous Forward Derating Curve Characteristics Per Bridge Element 3.0 100 10 2.0 1 1.0 0.1 Single phase half wave 60Hz TJ =25C Resistive or inductive load Pulse width=300us 0.375 (9.5mm) lead length 1% Duty cycle 0 0.01 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Ambient Temperature, (C) Instantaneous Forward Voltage, (V) Fig.3 - Maximum Non-repetitive Forward Fig.4 - Typical Reverse Characteristics Surge Curren Per Bridge Element Per Bridge Element 200 10.0 TJ=100C 100 1.0 50 0.1 TJ=25C 8.3ms single half sine-wave (JEDEC Method) 0.01 10 1 10 100 0 20 40 60 80 100 120 140 Number of Cycles at 60Hz Percent of Rated Peak Reverse Voltage, (V) REV:A QW-BG015 Page 2 Peak Forward Surge Current, (A) Average Forward Current, (A) Instantaneous Reverse Current, (A) Instantaneous Forward Current, (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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