Low Capacitance ESD Protection Diode ACPDQC5V0USP-HF RoHS Device Halogen Free 0402C/SOD-923F Features 0.041(1.05) - Uni-directional ESD protection. 0.037(0.95) - ESD Protection: IEC61000-4-2 Level 4 ESD protection. - Surface mount package. 0.026(0.65) 0.022(0.55) - Low capacitance. - Low Leakage current. - High component density. 0.022(0.55) 0.018(0.45) - Comply with AEC-Q101 0.012(0.30) 0.001(0.02) 0.008(0.20) Max. Mechanical data - Case: 0402C/SOD-923F standard package, molded plastic. 0.022(0.55) - Terminals: Matte tin plated, Solderable per 0.018(0.45) MIL-STD-750, Method 2026. Dimensions in inches and (millimeter) - Marking Code: Cathode band & 5S - Mounting position: Any. Circuit diagram - Weight: 0.001 grams(approx.). Maximum Rating And Electrical Characteristics (at TA=25C unless otherwise noted) Typ Symbol Min Max Unit Parameter Conditions Reverse stand-off voltage VRWM 5.0 V Forward voltage IF = 10mA VF 1.5 V Breakdown voltage IR = 1mA VBR 5.4 V Reverse leakage current A VR = 5V IR 0.1 1.0 Junction capacitance VR = 0V,f = 1MHz pF CJ 0.6 0.9 IEC 61000-4-2(air) 15 ESD capability ESD kV IEC 61000-4-2(contact) 8 IPP = 1A,TP=8/20us 13 Clamping voltage VC V IPP = 2.5A,TP=8/20us 20 Peak pulse power PPP 50 W Operation temperature TJ 150 C Storage temperature TSTG -55 150 C Company reserves the right to improve product design , functions and reliability without notice. REV:B AQW-G7001 Page 1 Comchip Technology CO., LTD.Low Capacitance ESD Protection Diode RATING AND CHARACTERISTIC CURVES (ACPDQC5V0USP-HF) Fig. 1 - 8/20us Peak pulse current Fig. 2 - Power rating derating curve waveform acc. IEC 61000-4-5 120% 120 Test Waveform parameters Mounting on glass epoxy PCBs tf=8us Ta=25C Peak Valur Ipp td=20us 100 100% 80 -t 80% e 60 60% 40 40% td= t Ipp / 2 20 20% 0 0% 0 25 50 75 100 125 150 0 5 10 15 20 25 30 Ambient temperature, ( C ) TTiimmee,, ((uuss)) Fig. 3 - Clamping voltage vs. Fig. 4 - Forward voltage vs. peak pulse current forward current 1000 25 150C 100 20 75C 10 15 25C 10 1 8/20us waveform 5 0 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 Peak pulse current,IPP (A) Forward current,IF (mA) Fig. 5 - Capacitance between terminals characteristics 0.7 f=1MHz TA=25C 0.6 0.5 0.4 0.3 0.2 0.1 0 1 2 3 4 Reverse voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B AQW-G7001 Page 2 Comchip Technology CO., LTD. Clamping voltage,VC (V) Percentage of Ipp Capacitance between terminals, (PF) Reverse current, ( A ) Power rating, (%)