X-On Electronics has gained recognition as a prominent supplier of ATV30C400J-HF ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. ATV30C400J-HF ESD Suppressors / TVS Diodes are a product manufactured by Comchip. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

ATV30C400J-HF Comchip

ATV30C400J-HF electronic component of Comchip
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Part No.ATV30C400J-HF
Manufacturer: Comchip
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 3000W 40V UNIDIRECTION AECQ101
Datasheet: ATV30C400J-HF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.669 ea
Line Total: USD 2007 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.669
6000 : USD 0.669
9000 : USD 0.6577
24000 : USD 0.6426

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Vf - Forward Voltage
Cnhts
Hts Code
Mxhts
Taric
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We are delighted to provide the ATV30C400J-HF from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ATV30C400J-HF and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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SMD Transient Voltage Suppressor ATV30C5V0-HF Thru. ATV30C441-HF Working Peak Reverse Voltage: 5.0 to 440 Volts Power Dissipation: 3000 Watts RoHS Device Halogen Free SMC/DO-214AB Features 0.281(7.15) - Glass passivated chip. 0.260(6.60) - 3000W peak pulse power capability with a 10/1000s waveform, repetitive rate (duty cycle):0.01% 0.126(3.20) 0.238(6.04) 0.114(2.90) 0.219(5.55) - Low leakage. - Uni and Bidirectional unit. - Excellent clamping capability. 0.313(7.95) - Comply with AEC-Q101 0.305(7.75) 0.012(0.30) 0.006(0.15) - Very fast response time. 0.100(2.53) - UL recognized file E349157 R 0.078(1.98) - Range: ATV30C5V0J(B) thru. ATV30C171J(B) 0.008(0.20) 0.059(1.51) 0.000(0.00) 0.030(0.75) Mechanical Data Dimensions in inches and (millimeter) - Case: DO-214AB/SMC molded plastic. - Epoxy: UL 94V-0 rate flame retardant Circuit Diagram - Terminals: Solderable per MIL-STD-750, method 2026. Bi-directional Uni-directional - Polarity: Color band denoted cathode end except bipolar. - Weight: 0.230 gram (approx.) Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol Characteristics Value Units Peak power dissipation with a 10/1000 s PPP 3000 W waveform (Note 1) Peak pulse current with a 10/1000 s IPP See Next Table A waveform (Note 1) Power dissipation on infinite heatsink PD 6.0 W at TL=75C Peak forward surge current, 8.3ms single IFSM 300 A half sine-wave unidirectional only (Note 2) Maximum instantaneous forward voltage VF 3.5/5.0 V at 100A for unidirectional only (Note 3) Operation junction and storage TJ, TSTG -55 to +150 C temperature range No tes 1: . Non-repetitive current pulse, per Fig.5 and derated above TA=25C, per Fig.1 2. Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. 3. VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V Company reserves the right to improve product design , functions and reliability without notice. REV: C AQW-JTV03 Page 1 Comchip Technology CO., LTD.SMD Transient Voltage Suppressor RATING AND CHARACTERISTIC CURVES (ATV30C5V0-HF Thru. ATV30C441-HF) Fig.1 - Pulse Derating Curve Fig.2 - Max. Non-Repetitive Surge Current 300 100 8.3mS single half sine-wave (JEDEC method) TJ=TJ , max. 75 250 50 200 25 150 0 0 0 25 50 75 100 125 150 175 1 10 100 Ambient Temperature, (C ) Number of Cycles at 60Hz Fig.3 - Steady State Power Derating Curve Fig.4 - Peak Pulse Power Rating Curve 7 100 6 5 10 4 3 1.0 2 1 0 0.1 1 10 100 1000 10000 0 25 50 75 100 125 150 175 Pulse Width, ( s) Lead Temperature, (C ) Fig.6 - Typical Junction Capacitance Fig.5 - Pulse Waveforem 100000 TJ = 25C TR=10 s Pluse width(td) is defined as the point where the peak current 100 Peak value decays to 50% of Ipp 10000 Bi-directional (Ipp) zero bias Uni-directional zero bias 1000 Ipp Half Value= 2 Uni-directional VRWM 50 100 10 / 1000 sec. waveform as defined by R.E.A. 10 Bi-directional VRWM td TJ=25C f=1.0MHz 1 0 1 10 100 1000 0 1.0 2.0 3.0 4.0 Time, (ms) Reverse Breakdown Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV: C AQW-JTV03 Page 2 Comchip Technology CO., LTD. Peak Pulse Derating in Percentage of Peak Pulse Current, (%) Steady Power Dissipation, (W) Peak Power or Current, (%) Junction Capacitance, (pF) Peak Power, (kW) Peak Forward Surge Current, (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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