ATV50C360J-HF Comchip

ATV50C360J-HF electronic component of Comchip
ATV50C360J-HF Comchip
ATV50C360J-HF ESD Protection Diodes / TVS Diodes
ATV50C360J-HF  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ATV50C360J-HF ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. ATV50C360J-HF ESD Protection Diodes / TVS Diodes are a product manufactured by Comchip. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No. ATV50C360J-HF
Manufacturer: Comchip
Category: ESD Protection Diodes / TVS Diodes
Description: ESD Suppressors / TVS Diodes 5000W 36V UNIDIRECTION AECQ101
Datasheet: ATV50C360J-HF Datasheet (PDF)
Price (USD)
1: USD 2.15 ea
Line Total: USD 2.15 
Availability : 463
  
Ship by Thu. 23 Oct to Mon. 27 Oct
QtyUnit Price
1$ 2.15
10$ 1.656
100$ 1.0571
500$ 1.0087
1000$ 0.9779
3000$ 0.9372

Availability 463
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.15
10$ 1.656
100$ 1.0571
500$ 1.0087
1000$ 0.9779
3000$ 0.9372

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Vf - Forward Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ATV50C360J-HF from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ATV50C360J-HF and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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SMD Transient Voltage Suppressor ATV50C110-HF Thru. ATV50C441-HF Working Voltage: 11 to 440 Volts Peak Pulse Power: 5000 Watts RoHS Device Halogen Free SMC/DO-214AB Features 0.280(7.02) - Glass passivated chip. 0.260(6.52) - 5000W peak pulse power capability with a 10/1000s 0.245(6.15) waveform, repetitive rate (duty cycle):0.01% 0.126(3.16) 0.220(5.52) 0.114(2.86) - Low leakage. - Uni and Bidirectional unit. - Excellent clamping capability. 0.320(8.02) - Comply with AEC-Q101 0.305(7.64) 0.012(0.30) 0.006(0.15) - Very fast response time. 0.103(2.59) 0.079(1.98) - UL recognized file E349157 R 0.008(0.20) 0.060(1.51) 0.000(0.00) 0.030(0.75) Mechanical Data - Case: DO-214AB/SMC molded plastic. Dimensions in inches and (millimeter) - Epoxy: UL 94V-0 rate flame retardant - Lead: Solderable per MIL-STD-750, method 2026. Circuit Diagram - Polarity: Color band denoted cathode Bi-directional Uni-directional end except bipolar. - Mounting position: Any - Weight: 0.230 gram (approx.) Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol Parameter Value Units Peak power dissipation with a 10/1000 s PPP 5000 W waveform (Note 1) Peak pulse current with a 10/1000 s IPP See Next Table A waveform (Note 1) Power dissipation on infinite heatsink PD 6.5 W at TL=75C Peak forward surge current, 8.3ms single IFSM 300 A half sine-wave unidirectional only (Note 2) Maximum instantaneous forward voltage VF 3.5/5.0 V at 100A for unidirectional only (Note 3) Operation junction and storage TJ, TSTG -55 to +150 C temperature range No tes 1: . Non-repetitive current pulse, per Fig.5 and derated above TA=25C, per Fig.1 2. Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. 3. VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V Company reserves the right to improve product design , functions and reliability without notice. REV:B AQW-JTV04 Page 1 Comchip Technology CO., LTD.SMD Transient Voltage Suppressor RATING AND CHARACTERISTIC CURVES (ATV50C110-HF thru. ATV50C441-HF) Fig.1 - Pulse Derating Curve Fig.2 - Maximum Non-Repetitive Surge Current 140 350 120 300 100 250 80 200 60 150 40 100 8.3ms single half 20 sine-wave (JEDEC method) 50 TJ=TJ max. 0 0 25 50 75 150 175 0 100 125 1 10 100 Ambient Temperature, TA (C) Number of Cycles at 60Hz Fig.4 - Peak Pulse Power Rating Curve Fig.3 - Steady State Power Derating Curve 100 7 6 5 10 4 3 1 2 1 0.1 0 0.1 1 10 100 1000 10000 0 25 50 75 100 125 150 175 Pulse Width, td (s) Lead Temperature, TL (C) Fig.6 - Typical Junction Capacitance Fig.5 - Pulse Waveforem 10000 TJ = 25C Tr=10 s Bi-directional Pluse width(td) is defined as the zero bias point where the peak current Uni-directional 100 Peak value decays to 50% of Ipp zero bias (Ipp) 1000 Uni-directional VRWM Ipp Half Value= 2 100 50 Bi-directional VRWM 10 / 1000 sec. waveform 10 as defined by R.E.A. TJ=25C td f=1.0MHz 1 0 1 10 100 1000 0 1.0 2.0 3.0 4.0 Time, (ms) Reverse Breakdown Voltage, VBR (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B AQW-JTV04 Page 2 Comchip Technology CO., LTD. Peak Pulse Derating in Percentage Peak Pulse Current, (%) Steady State Power Dissipation, (W) of Peak Power or Current, (%) Junction Capacitance, CJ (pF) Peak Forward Surge Current, (A) Peak Power, (kW)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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