BAS16-G Comchip

Surface Mount Switching Diode COMCHIPCOMCHIP www.comchip.com.tw BAS16 Voltage: 75 Volts Current: 200mA Features Fast Switching Speed SOT-23 Surface Mount Package Ideally Suited for .119 (3.0) .110 (2.8) Automatic Insertion .020 (0.5) For General Purpose Switching Top View Applications 3 High Conductance 1 2 Mechanical data Case: SOT -23, Plastic .037(0.95) .037(0.95) Terminals : Solderable per NIL-STD -202, method 208 Approx. Weight: 0.008 gram .103 (2.6) .020 (0.5) .020 (0.5) .086 (2.2) 3 1 CATHODE ANODE Dimensions in inches (millimeters) MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage V 75 Vdc R Peak Forward Current I 200 mAdc F Peak Forward Surge Current I 500 mAdc FM(surge) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit (1) Total Device Dissipation FR5 Board P 225 mW D T = 25C A Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient 556 C/W R JA Total Device Dissipation P 300 mW D (2) Alumina Substrate, T = 25C A Derate above 25C 2.4 mW/C Thermal Resistance, Junction to Ambient R 417 C/W JA Junction and Storage Temperature T , T 55 to +150 C J stg Page 1 MDS0212004A .006 (0.15)max056 (1.40) .006 (0.15) .047 (1.20) .002 (0.05) .044 (1.10) .035 (0.90)Surface Mount Switching Diode COMCHIPCOMCHIP www.comchip.com.tw ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I Adc R (V = 75 Vdc) 1.0 R (V = 75 Vdc, T = 150C) 50 R J (V = 25 Vdc, T = 150C) 30 R J Reverse Breakdown Voltage V 75 Vdc (BR) (I = 100 Adc) BR Forward Voltage V mV F (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F Diode Capacitance C 2.0 pF D (V = 0, f = 1.0 MHz) R Forward Recovery Voltage V 1.75 Vdc FR (I = 10 mAdc, t = 20 ns) F r Reverse Recovery Time t 6.0 ns rr (I = I = 10 mAdc, R = 50 ) F R L Stored Charge Q 45 pC S (I = 10 mAdc to V = 5.0 Vdc, R = 500 ) F R L 1.FR5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. Page 2 MDS0212004A