X-On Electronics has gained recognition as a prominent supplier of BAW56-G Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. BAW56-G Small Signal Switching Diodes are a product manufactured by Comchip. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

BAW56-G Comchip

BAW56-G electronic component of Comchip
BAW56-G Comchip
BAW56-G Small Signal Switching Diodes
BAW56-G  Semiconductors

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See Product Specifications
Part No. BAW56-G
Manufacturer: Comchip
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes SCHOTTKY DIODE 215mA 70V
Datasheet: BAW56-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1111 ea
Line Total: USD 0.11 
Availability - 10332
Ship by Wed. 22 Jan to Fri. 24 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10332
Ship by Wed. 22 Jan to Fri. 24 Jan
MOQ : 1
Multiples : 1
1 : USD 0.1111
10 : USD 0.0748
100 : USD 0.0462
1000 : USD 0.0429
3000 : USD 0.0341
9000 : USD 0.0275
24000 : USD 0.022
45000 : USD 0.0209
99000 : USD 0.0198

26190
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1111
12000 : USD 0.1015
18000 : USD 0.0945
24000 : USD 0.0891

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Package / Case
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAW56-G from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAW56-G and other electronic components in the Small Signal Switching Diodes category and beyond.

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Surface Mount Switching Diode COMCHIPCOMCHIP www.comchip.com.tw Voltage: 70 Volts BAV99 Thru BAW56 Current: 215mA Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertio For General Purpose Switching Applications High Conductance SOT-23 .119 (3.0) Mechanical data .110 (2.8) Case: SOT -23, Plastic .020 (0.5) Top View Approx. Weight: 0.008 gram 3 This diodes is also available in other configurations including a dual common cathode with type designation BAV70, a dual common anodes with type designation BAW56 and single chip inside with type 1 2 Designation BAL99 BAV99 BAL99 .037(0.95) .037(0.95) ANODE CATHODE 1 1 3 3 ANODE ANODE 2 2 CATHODE CATHODE ANODE CATHODE .103 (2.6) CATHODE ANODE 1 1 .020 (0.5) .020 (0.5) .086 (2.2) 3 3 CATHODE ANODE 2 2 Dimensions in inches (millimeters) ANODE CATHODE BAV70 BAW56 Maximum Ratings Rating Symbol Value Units V V Continuous Reverse Voltage 70 R DC I Peak Forward Current 215 mAdc F Peak Forward Surge Current I (surge) 500 mAdc FM Thermal Characteristics Characteristic Symbol Max Units Total Device Dissipation FR 5 Board(1) T = 25C 225 mW A P D Derate above 25C 1.8 mW/C R Thermal Resistance, Junction to Ambient 556 C/W JA Total Device Dissipation Alumina Substrate,(2) T = 25C 300 mW A P D Derate above 25C 2.4 mW/C R Thermal Resistance, Junction to Ambient 417 C/W JA C Junction and Storage Temperature T , T 55 to +150 J stg Electrical Characterics (TA = 25C unless otherwise noted) Characteristic (OFF CHARACTERISTICS) Symbol Max Units Min Reverse Breakdown Voltage ( I = 100 uAdc ) V 70 - Vdc (BR) (BR) Reverse Voltage Leakage Current V = 25 Vdc, T = 150C - 30 R J I V = 70 Vdc 2.5 uAdc R R - V = 70 Vdc, T = 150C - 50 R J C Diode Capacitance (V = 0, f = 1.0 MHz)) 1.5 pF D R Forward Voltage I = 1.0 mAdc 715 F - I = 10 mAdc - 855 F VF mV I = 50 mAdc - 1000 F I = 150 mAdc F - 1250 Trr Reverse Recovery Time (I = I = 10 mAdc, I = 1.0mAdc) R = 100 nS F R R(REC) L 6.0 1.FR5 = 1.0 X 0.75X 0.062 in. 2.Aluminum = 0.4X 0.3X 0.024 in. 99.5% aluminum. MDS0210001A Page 1 .006 (0.15)max056 (1.40) .006 (0.15) .047 (1.20) .002 (0.05) .044 (1.10) .035 (0.90)Surface Mount Switching Diode COMCHIP www.comchip.com.tw RATING AND CHARACTERISTIC CURVES (BAV99 Thru BAW56) 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H 10% rr 0.1 F 90% DUT I = 1.0 mA R(REC) 50 Output 50 Input I R Pulse Sampling V R Output Pulse Generator Oscilloscopes Input Signal (I = I = 10 mA Measured F R at I = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit 100 10 T A = 150C T = 85C T A A = 125C 1.0 10 T = 40C A T = 85C A 0.1 T = 55C 1.0 A T = 25C A 0.01 T = 25C A 0.1 0.001 0.6 0.8 1.0 0 10 20 30 40 50 0.2 0.4 1.2 V , Forward Voltage (V) V , Reverse Voltage (V) F R Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 0.64 0.60 0.56 0.52 0 24 6 8 V , Reverse Voltage (V) R Figure 4. Capacitance Page 2 MDS0210001A I , Forward Current (mA) (mA) F C , Diode Capacitance (pF) D I , Reverse Current (A) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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