Small Signal Switching Diodes CDSH3-222N-G/222P-G Reverse Voltage: 80 Volts Power Dissipation: 150 mW RoHS Device SOT-523 Features -Design for mounting on small surface. 0.067(1.70) 0.059(1.50) -High speed switching. 3 -High mounting capability, strong surge 0.033(0.85) 0.030(0.75) withstand, high reliability. 1 2 0.043(1.10) Mechanical data 0.035(0.90) 0.008(0.20) 0.004(0.10) -Case: SOT-523, molded plastic. 0.069(1.75) -Terminals: solderable per MIL-STD-750, 0.031(0.80) 0.057(1.45) 0.024(0.60) method 2026. -Approx. weight: 0.002 grams 0.004(0.10)max. 0.012(0.30) 0.006(0.15) 0.004(0.10)min. Circuit diagram 3 3 Dimensions in inches and (millimeter) 1 2 1 2 CDSH3-222N-G CDSH3-222P-G Maximum Ratings and Electrical Characteristics (at Ta=25C unless otherwise noted) Parameter Symbol Conditions Value Units Repetitive peak reverse voltage VRRM 80 V Reverse voltage VR 80 V Peak forward current IF 300 mA Peak surge forward current IFSM T=1.0 sec 4 A Power dissipation PD 150 mW Maximum forward voltage VF IF=100mA 1.2 V Maximum reverse current IR VR=70V 0.1 A Maximum reverse recovery time Trr IF=IR=5mA, RL=100 4 nS Maximum diode capacitance CJ VR=6V, f=1.0MHz 3.5 pF O Maximum junction temperature TJ 150 C O Storage temperature TSTG -55 to +150 C REV:A QW-B0011 Page 1 Comchip Technology CO., LTD.Small Signal Switching Diodes RATING AND CHARACTERISTIC CURVES (CDSH3-222N-G/222P-G) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics (P type) (P type) 100 1 O TA=100 C O 100n O TA=75 C TA=85 C 10 O TA=50 C 10n O TA=30 C O TA=-30 C O TA=25 C O TA=0 C O O TA=25 C TA=0 C 1n O 1 TA=-25 C 0.1n 0.1 0.01n 0 0.4 0.8 1.2 1.6 0 10 20 30 40 50 Forward Voltage, (V) Reverse Voltage, (V) Fig.3 - Forward Characteristics Fig.4 - Reverse Characteristics (N type) (N type) 100 1m O TA=100 C 100 O TA=75 C O TA=85 C O 10 TA=50 C 10 O O O TA=-30 C TA=30 C TA=25 C O 1 TA=0 C O O TA=25 C TA=0 C 1 100n O TA=-25 C 10n 0.1 1n 20 60 80 0 0.4 0.8 1.2 1.6 0 40 Forward Voltage, (V) Reverse Voltage, (V) Fig.5 - Capacitance Between Terminals Fig.6 - Power Derating Curve Characteristics 4 200 O Mounted on glass TJ=25 C f=1MHz epoxy PCBs 3 150 2 100 P Type N Type 50 1 0 0 0 4 8 12 16 20 0 25 50 75 100 125 150 175 Reverse Voltage, (V) Ambient Temperature, (C) REV:A QW-B0011 Page 2 Comchip Technology CO., LTD. Forward Current, (mA) Forward Current, (mA) Capacitance Between Terminals, (pF) owe sip on D ax., (%) Reverse Current, (A) Reverse Current, (A) P r Dis ati PD/P M