SMD Switching Diodes - CDST-19-G/20-G + High Speed RoHS Device Features SOT-23 - Fast switching diode. 0.119 (3.00) 0.110 (2.80) - Surface mount package ideally for automatic 3 insertion. 0.056 (1.40) - For general purpose switching applications. 0.047 (1.20) - High conductance. 1 2 0.083 (2.10) 0.066 (1.70) Mechanical data 0.006 (0.15) 0.003 (0.08) - Case: SOT-23 0.041 (1.05) 0.103 (2.60) 0.035 (0.90) 0.086 (2.20) - Terminals: Solder plated, solderable per MIL-STD-750, Method 2026. - Weight: 0.008 gram. 0.006 (0.15) max 0.020 (0.50) 0.012 (0.30) 0.007 (0.20) min Circuit Diagram 3 Dimensions in inches and (millimeters) 1 2 Maximum Rating (at Ta=25C unless otherwise noted) Parameter Symbol CDST-19-G CDST-20-G Unit Non-Repetitive peak reverse voltage VRM 100 150 V DC blocking voltage VR 100 150 V Average rectified output current IO 200 mA Power dissipation PD 250 mW O Thermal resistance-Junction to ambient air RJA 500 C/W O Junction temperature TJ 150 C O Storage temperature range TSTG -65 ~ +150 C Electrical Characteristics (at TA=25C unless otherwise noted) Max Unit Parameter Symbol Test Conditions Min CDST-19-G 100 Reverse breakdown voltage VBR IR=100uA V CDST-20-G 150 CDST-19-G VR=100V Reverse leakage current IR 0.1 UA CDST-20-G VR=150V IF=100mA 1 Forward voltage VF V IF=200mA 1.25 Junction capacitance pF CJ VR=0V, f=1MHZ 5 Reverse recovery time trr IF=IR=30mA, Irr=0.1XIR 50 nS Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-B0021 Page 1 Comchip Technology CO., LTD.SMD Switching Diodes Characteristic Curves (CDST-19-G/20-G) Fig.1 - Forward Characteristics Fig.2 - Leakage Current vs Junction Temperature 1000 100 O TJ=25 C 100 10 10 1 1 0.1 0.1 0.01 0.01 0 0 1 2 100 200 TJ, Junction Temperature (C) VF, Forward Voltage (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-B0021 Page 2 Comchip Technology CO., LTD. IF, Forward Current (mA) IR, Leakage Current (uA)