Small Signal Switching Diodes CDST-21/A/C/S-G Reverse Voltage: 250 Volts Forward Current: 200 mA RoHS Device Features SOT-23 - Fast switching speed. 0.118(3.00) - Surface mount package ideally suited for 0.110(2.80) Automatic Insertion. 3 - For general purpose switching applications. 0.055(1.40) 0.047(1.20) - High conductance. 1 2 0.079(2.00) 0.071(1.80) Mechanical data 0.006(0.15) - Case: SOT-23, molded plastic. 0.003(0.08) 0.041(1.05) 0.100(2.55) - Terminals: Solderable per MIL-STD-750, 0.035(0.90) 0.089(2.25) method 2026. - Weight: 0.008 grams(approx.). 0.004(0.10) max 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Circuit diagram Dimensions in inches and (millimeter) 3 3 3 3 1 2 1 2 1 2 1 2 CDST-21-G CDST-21A-G CDST-21C-G CDST-21S-G Maximum Ratings (at Ta=25C unless otherwise noted) Symbol Parameter Conditions Value Unit Repetitive peak reverse voltage VRRM 250 V Working peak reverse voltage VRWM 250 V DC blocking voltage 250 VR V Average rectified output current IO 200 mA Non-Repetitive Peak forward surge current t=8.3ms IFSM 2.5 A Repetitive peak forward surge currnt IFRM 625 mA Power dissipation PD 225 mW Thermal resistance Junction to ambient R JA 555 C/W Junction temperature TJ 150 C Storage temperature range TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:D QW-B0015 Page 1 Comchip Technology CO., LTD.Small Signal Switching Diodes Electrical Characteristics (at Ta=25C unless otherwise noted) Parameter Symbol Conditions Min. Max. Unit Reverse breakdown voltage IR = 100 A V(BR) 250 V Reverse voltage leakage current A VR = 200V IR 0.1 IF = 100mA 1000 Forward voltage VF mV IF = 200mA 1250 Diode Capacitance VR = 0V, f = 1MHz CD 5 pF Reverse recovery time IF = IR = 30mA, Irr = 0.1xIR, RL = 100 50 Trr nS RATING AND CHARACTERISTIC CURVES (CDST-21/A/C/S-G) Fig.1 - Typical Forward Characteristics Fig.2 - Typical Reverse Characteristics 1000 1000 TA=100C TA=100C 100 100 TA=25C 10 10 TA=25C 1 0.1 1 0 0.4 0.8 1.2 1.6 2.0 0 40 80 120 160 200 Forward Voltage, (V) Reverse Voltage, (V) Fig.3 - Capacitance Between Fig.4 - Power Derating Curve 1.6 300 f=1MHz 250 TA=25C 1.4 200 1.2 150 1.0 100 0.8 50 0 0.6 0 4 8 12 16 20 0 25 50 75 100 125 150 Reverse Voltage, (V) Ambient Temperature, (C) Company reserves the right to improve product design , functions and reliability without notice. REV:D QW-B0015 Page 2 Comchip Technology CO., LTD. Capacitance Between Terminals, (pF) Forward Current, (mA) Power Daissipation, (mW) Reverse Current, (nA)