SMD Switching Diode CDSW3004-HF Reverse Voltage: 300 V Forward Current: 225mA RoHS Device Halogen Free SOD-123 Features 0.152(3.85) 0.140(3.55) - Low leakage current. - High reverse breakdown voltage. 0.026(0.65) 0.069(1.75) - Fast switching speed. 0.057(1.45) 0.018(0.45) - + - Surface mount package ideally suited for 0.112(2.85) - automatic insertion. 0.100(2.55) Mechanical data 0.049(1.25) 0.006(0.15) 0.041(1.05) 0.002(0.05) - Case: SOD-123, Molded Plastic 0.004(0.10) - Terminals: Solderable per MIL-STD-750, 0.001(0.02) method 2026. 0.018(0.45) 0.010(0.25) Circuit diagram Dimensions in inches and (millimeter) Maximum Rating (at Ta=25C unless otherwise noted) Symbol Parameter Value Unit Peak repetitive reverse voltage VRRM 350 V Working peak reverse voltage t=1.0s VRWM 300 V DC reverse voltage t=1.0s VR RMS reverse voltage VR(RMS) 212 V Forward continuous current IFM 225 mA Repetitive peak forward current IFRM 625 mA t=1.0s 4.0 Non-Repetitive peak forward surge current IFSM A t=1.0s 1.0 Power dissipation 400 PD mW Thermal resistance junction to ambient air R JA 312 C/W Junction temperature range Tj -65~+150 C Storage temperature range TSTG -65~+150 C Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-J0012 Page 1 Comchip Technology CO., LTD.SMD Switching Diode Electrical Characteristics (at Ta=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Reverse breakdown voltage - - IR = 150 A V(BR)R 350 V IF = 20mA VF1 - 0.78 0.87 V Forward voltage IF = 100mA VF2 - 0.93 1.0 V IF = 200mA VF3 - 1.03 1.25 V VR = 240 V , TJ = 25C IR1 - 30 100 nA Reverse current A VR = 240 V , TJ = 150C IR2 - 35 100 Total Capacitance f = 1 MHZ , VR = 0 V CT - 1.0 5.0 pF IF = IR = 30 mA, RL = 100 , Reverse recovery time trr - - 50 nS Irr = 0.1 X IR Typical Characteristics (CDSW3004-HF) Fig.1 - Power Derating Curve Fig.2 - Forward Characteristics 500 1000 400 100 Tj=150C 300 10 Tj=25C 200 1 100 0.1 0 0.01 0 25 50 75 100 125 150 0 0.4 0.8 1.6 2.0 1.2 Ambient Temperature, (C) Forward Voltage, (V) Fig.4 - Typical Total Capacitance Fig.3 - Typical Reverse Characteristics vs. Reverse Voltage 1000 1.1 f = 1MHZ Tj=150C 100 1.0 10 Tj=75C 1 0.9 0.1 Tj=25C 0.8 0.01 0.001 0.7 0 50 100 150 200 250 300 350 0.01 0.1 1.0 10 100 Instantaneous Reverse Voltage, (V) Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-J0012 Page 2 Comchip Technology CO., LTD. Instantaneous Reverse Current, (A) Power Dissipation, (mW) Total Capacitance, (p F) Forward Current, (mA)