SMD ESD Protection Diode CPDA10R3V3U-HF RoHS Device Halogen Free Features - IEC61000-4-2 (ESD)15kV(Contact) DFN10P - Working voltage: 3.3 V - Low leakage current. - Low capacitance: 0.5 pF typical (I/O to GND) 0.100(2.55) 0.096(2.45) PIN 1 DOTBYMARKING Mechanical data - Case: DFN10P package, molded plastic. - Terminals: Gold plated, solderable per MIL-STD-750,method 2026. 0.041(0.55) 0.037(0.45) - Mounting position: Any Circuit Diagram 0.002(0.05) MAX. 0.018(0.45) 0.014(0.35) 0.010(0.255) 0.009(0.245) 0.039(0.99) 0.035(0.89) 0.016(0.40) I/O I/O I/O I/O 0.012(0.30) Pin 4 Pin 1 Pin 2 Pin 5 0.001(0.03) 0.020(0.50) 0.020(0.50) BSC. BSC. BSC. 0.079(2.00) BSC. GND Pin 3 & 8 Dimensions in inches and (millimeters) Package N/C N/C N/C N/C 10 9 7 8 6 GND = Pin 1 indicator 1 2 4 5 3 I/O I/O I/O I/O Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-G7082 Page 1 Comchip Technology CO., LTD. 0.023(0.59) 0.041(1.05) BSC. 0.037(0.95)SMD ESD Protection Diode Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Peak pulse power ( tp = 8/20 us) PPP 55 W Peak pulse current ( tp = 8/20 us) IPP A 5 ESD per IEC 61000-4-2 (Air) ESD 15 kV ESD per IEC 61000-4-2 (Contact) Operating temperature range TJ -55 to +125 C Storage temperature range TSTG -55 to +150 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Reverse stand-o voltage VRWM 3.3 V Forward voltage IF = 10 mA VF 1.2 V Breakdown voltage IT = 1 mA VBR 4 V Leakage current VRWM = 3.3V IR 0.5 uA IPP = 1A, TP = 8/20us, 5.6 6.5 VC V I/O Pin to GND Clamping voltage IPP = 5A, TP = 8/20us, VC V 9 11 I/O Pin to GND IPP = 8A, TP = 100ns, VCL 9.3 V I/O Pin to GND Clamping voltage IPP = 16A, TP = 100ns, VCL V 13 I/O Pin to GND Dynamic resistance I/O Pin to GND RDYN 0.46 VR = 0V, f = 1MHZ Junction capacitance Cj pF 0.5 0.7 I/O Pin to GND Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-G7082 Page 2 Comchip Technology CO., LTD.