SMD ESD Protection Diode CPDA10R5V0SP-HF RoHS Device Halogen Free Features DFN10P - IEC61000-4-2 (ESD)14kV(Contact),15kV(Air). - Working voltage: 5.0 V 0.100(2.55) 0.096(2.45) - Low leakage current. - Low capacitance: 0.15 pF typical (I/O to GND) 0.041(1.05) 0.037(0.95) Mechanical data - Case: DFN10p package,molded plastic. - Terminals: Gold plated, solderable per MIL-STD-750,method 2026. - Mounting position: Any Circuit Diagram 0.008(0.20) Typ. I/O I/O I/O I/O Pin 1 Pin 2 Pin 4 Pin 5 0.022(0.55) 0.018(0.45) 0.016(0.40) Typ. 0.014(0.35) Typ. GND Pin 3 Dimensions in inches and (millimeters) Package N/C N/C N/C N/C 10 9 7 8 6 GND 1 2 4 5 3 I/O I/O I/O I/O Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 1 QW-G7079 Comchip Technology CO., LTD. 0.014(0.35) Typ.SMD ESD Protection Diode Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Peak pulse power ( tp = 8/20 us) PPP 60 W Peak pulse current ( tp = 8/20 us) IPP 3 A ESD per IEC 61000-4-2(Air) 15 ESD kV ESD per IEC 61000-4-2(Contact) 14 Operating temperature TJ -55 to +125 C Storage temperature TSTG -55 to +150 C Electrical Characteristics (at TA=25 C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Reverse stand-off voltage VRWM 5.0 V Breakdown voltage IR = 1mA VBR 6.0 V Leakage current VR = 5.0V IL 50 nA IPP = 1A, Tp = 8/20us Clamping voltage VC 12 V Any Channel Pin to Ground VR = 0 V, f = 1MHz Junction capacitance pF Cj 0.15 0.25 Any Channel Pin to Ground Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 QW-G7079 Comchip Technology CO., LTD.