SMD ESD Protection Diode CPDH3V3UP-HF RoHS Device Halogen Free SOD-523 Features 0.008(0.20)REF 0.051(1.30) 0.043(1.10) 0.014(0.35) -IEC61000-4-2 Level 4 ESD protection. 0.010(0.25) -Working voltage: 3.3V 0.033(0.85) 0.030(0.75) -Low leakage current. -Low operating and clamping voltages. 0.067(1.70) 0.059(1.50) Mechanical data 0.031(0.77) 0.020(0.51) -Case: SOD-523 standard package ,molded plastic. 0.006(0.15) 0.003(0.07) -Terminals: Solderable per MIL-STD-750, method 2026. 0.003(0.08) 0.001(0.01) -Marking Code: E3 -Mounting position: Any Dimensions in inches and (millimeter) -Weight: 0.0012 gram(approx.). Circuit Diagram Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Peak pulse power ( tp = 8/20 us) PPP 40 W Peak pulse current ( tp = 8/20 us) IPP 5 A ESD per IEC 61000-4-2(Air) 20 VESD kV ESD per IEC 61000-4-2(Contact) 15 O Operating temperature Tj -55 to +125 C O Storage temperature TSTG -55 to +125 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Reverse stand-off voltage VRWM 3.3 V Punch-through voltage IPT = 2uA VPT 3.5 V Snap-back voltage ISB = 50mA VSB 2.8 V Reverse leakage current VRWM = 3.3V IR 0.05 0.5 uA IPP = 1 A, tp=8/20us VC 5.5 V Clamping voltage IPP = 5 A, tp=8/20us VC 8.0 V Reverse clamping voltage IPPR = 1 A, tp=8/20us VCR 2.4 V Junction capacitance VR = 0 V, f = 1MHz Cj 12 16 pF Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JP018 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDH3V3UP-HF) Fig. 1 - Non-repetitive max. peak pulse Fig. 2 - Power rating derating curve power vs. pulse time 110 1 100 90 80 70 60 0.1 50 40 30 20 10 0.01 0 0.1 1 10 100 1000 0 25 50 75 100 125 150 Pulse duration-tp, (us) Ambient temperature, ( C ) Fig.3 - Clamping voltage vs. Fig.4 - Forward voltage vs. peak pulse current Forward current 16 12 Waveform 14 Parameters: 10 tr=8us td=20us 12 8 10 8 6 Waveform 6 Parameters: 4 tr=8us td=20us 4 2 2 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Peak pulse current, (A) Forward current, (A) Fig.5 - Junction capacitance vs. reverse voltage 20 16 12 8 4 0 0 1 2 3 4 Reverse voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JP018 Page 2 Comchip Technology CO., LTD. Normalized capacitance - Cj ,(pF) Clamping voltage, (V) Max. peak pulse power-PPP, (kW ) Forward voltage, (V) Power rating, (%)