Supper Low Capacitance SMD ESD Protection Diode CPDQ5V0USP-HF RoHS Device Halogen Free Features - IEC61000-4-2 Level 4 ESD protection. 0402/SOD-923F - ESD Rating of Class 3(>16kV) per Human Body Mode. 0.041(1.05) 0.037(0.95) - Supper low capacitance 0.5 pF Typ. 0.033(0.85) 0.030(0.75) - Low clamping voltage. - Low body height: 0.016(0.4mm) 0.010(0.25) 0.006(0.15) 0.026(0.65) Mechanical data 0.022(0.55) - Epoxy: Meets UL 94V-0 0.007(0.17) 0.003(0.07) 0.006(0.15) - Case: 0402/SOD-923F small outline plastic package. 0.002(0.05) Void-free, Transfer-molded, Thermosetting plastic. 0.016(0.40) 0.013(0.34) - Terminals: Matte tin plated, solderable per MIL-STD-750,method 2026. - Mounting position: Any. Dimensions in inches and (millimeter) - High temperature soldering guaranteed: 260C/10 second. - Weight: 0.001 grams(approx.). Circuit Diagram - Pin 1: Cathode - Pin 2: Anode 1 2 Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Conditions Value Unit Typ. peak pulse power TP = 8/20 us PPP 9.8 W Peak pulse current TP = 8/20 us IPP A 1 IEC 61000-4-2(Air) ESD 15 kV ESD capability IEC 61000-4-2(Contact) ESD 10 kV Junction temperature rang TJ -55 to +125 C Storage temperature rang TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-JP033 Page 1 Comchip Technology CO., LTD.Supper Low Capacitance SMD ESD Protection Diode Electrical Characteristics (at TA=25C unless otherwise noted. VF=1.0V Max. IF=10mA for all types) Symbol Typ Parameter Conditions Min Max Unit Working peak reverse voltage VRWM 5.0 V Forward voltage IF = 10mA VF 0.9 V Breakdown voltage IT = 1mA VBR 5.4 V Reverse leakage current A VRWM = 5V IR 1.0 Clamping voltage IPP = 1A, TP = 8/20us VC 9.8 V Junction capacitance pF VR = 0V, f = 1MHz CJ 0.5 0.9 NOTES: 1. FR-5= 1.0*0.75*0.62 in. 2. Surge current waveform per Figure 1 3. VBR is measured with a pulse test current IT at an ambient temperature of 25C. RATING AND CHARACTERISTIC CURVES (CPDQ5V0USP-HF ) Fig.1 - Pulse Waveform Fig.2- IEC61000-4-2 Waveform 120% Test Waveform parameters tf=8us Ta=25C 100% Peak Valur Ipp td=20us 100% 90% -t 80% e 1 30 ns 60% 1 60 ns 40% td= t Ipp / 2 10% 20% tp = 0.7ns to 1ns 0% 0 5 10 15 20 25 30 IEC61000-4-2 Waveform t-Time, (us) Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-JP033 Page 2 Comchip Technology CO., LTD. Percentage of Ipp Ipeak, (%)