CPDQC5V0USP-HF Comchip

SMD Low Capacitance ESD Protection Diode CPDQC5V0USP-HF RoHS Device Halogen Free Features 0402C/SOD-923F - Uni-directional ESD protection. - IEC61000-4-2 Level 4 ESD protection. 0.041(1.05) 0.037(0.95) - Surface mount package. - Low capacitance. 0.026(0.65) 0.022(0.55) - Low Leakage current. - High component density. Mechanical data 0.022(0.55) - Case: 0402C/SOD-923F standard package, 0.018(0.45) molded plastic. 0.012(0.30) 0.001(0.02) - Terminals: Matte tin plated, solderable per 0.008(0.20) Max. MIL-STD-750, method 2026. - Marking Code: Cathode band & 5S - Mounting position: Any. 0.022(0.55) - Weight: 0.001 gram(approx.). 0.018(0.45) Circuit diagram Dimensions in inches and (millimeter) Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Conditions Value Unit Peak pulse power TP = 8/20us PPP 50 W Peak pulse current TP = 8/20us IPP 2.5 A IEC 61000-4-2(air) 15 ESD capability kV ESD IEC 61000-4-2(contact) 8 Operation temperature range Tj -55~+150 C Storage temperature range TSTG -55~+150 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Working peak reverse voltage VRWM V 5 Forward voltage IF = 10mA VF 1.5 V Diode breakdown voltage IT = 1mA VBR 5.4 V Reverse current VRWM = 5V IR 0.1 1.0 uA IPP = 1A, TP = 8/20us 13 Clamping voltage VC V IPP = 2.5A, TP = 8/20us 20 Junction capacitance VR = 0V, f = 1MHz pF CJ 0.6 0.9 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-G7063 Page 1 Comchip Technology CO., LTD.SMD Low Capacitance ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDQC5V0USP-HF) Fig.1 - 8/20us Peak Pulse Current Fig. 2 - Power Rating Derating Curve Waveform Acc. IEC 61000-4-5 120% 120 Test Waveform parameters Mounting on glass epoxy PCBs tf=8us Ta=25C Peak Valur Ipp 100 td=20us 100% 80 -t 80% e 60 60% 40 40% td= t Ipp / 2 20 20% 0 0% 0 25 50 75 100 125 150 0 5 10 15 20 25 30 Ambient Temperature, ( C ) TTiimmee,, ((uuss)) Fig.3 - Clamping Voltage Vs. Fig. 4 - Forward Voltage vs. Peak Pulse Current Forward Current 100 30 150C 25 125C 20 10 100C 15 75C 10 1 50C 25C 5 8/20us waveform 0 0 1.0 1.5 2.0 2.5 3.0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Peak Pulse Current, IPP (A) Forward Current,IF (mA) Fig.5 - Capacitance Between Terminals Characteristics 1.0 0.8 0.6 0.4 0.2 0 1 2 3 4 5 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-G7063 Page 2 Comchip Technology CO., LTD. Percentage of Ipp Capacitance Between Terminals, (PF) Clamping Voltage, VC (V) Reverse Current, (mA) Power Rating, (%)