SMD ESD Protection Diode CPDQT18V-HF RoHS Device Halogen Free Features - Bi-directional ESD protection of one line. DFNWB1006-2L - Low capacitance: 0.35pF. 0.043(1.08) - Low reverse clamping voltage. 0.037(0.95) - Reverse stand-o voltage: 18V. 0.027(0.68) - ESD rating of class 3(>16Kv) per human body model. 0.022(0.55) - Excellent package: 1.0mm x 0.6mm x 0.5mm. - Fast response time. 0.026(0.65) 0.002(0.05) - JESD22-A114-B ESD rating of class 3B per Typ REF. human body model. 0.024(0.60) - IEC 61000-4-2 Level 3 ESD protection. 0.016(0.40) 0.012(0.30) 0.008(0.20) Mechanical data - Case: DFNWB1006-2L package, 0.020(0.50) 0.002(0.05) 0.017(0.44) molded plastic. 0.000(0.00) Dimensions in inches and (millimeter) Circuit Diagram Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Value Unit IEC 61000-4-2 ESD voltage air model 20 IEC 61000-4-2 ESD voltage contact model VESD kV (Note 1) JESD22-A114-B ESD voltage per human body model 20 ESD voltage machine model 0.4 Peak pulse power (Note 2) PPP W 48 Peak pulse current (Note 2) IPP 4 A Lead solder temperature - maximum (10 second duration) TL C 260 Junction temperature TJ 150 C Storage temperature range TSTG -55 ~ +150 C Notes: 1. Device stressed with ten non-repetitive ESD pulses. 2. Non-repetitive current pulse 8/20s exponential decay waveform according to IEC 61000-4-5. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP072 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode Electrical Characteristics (at TA=25C unless otherwise noted) Parameter Symbol Typ Max Unit Conditions Min Reverse stand o voltage (Note 1) VRWM 18 V Reverse leakage current A VRWM = 18V IR 0.1 Breakdown voltage V(BR) IT = 1mA 19 21 V Clamping voltage (Note 2) IPP = 4A VC 12 V Junction capacitance VR = 0V, f = 1MHz pF CJ 0.35 0.5 Notes: 1. Other voltages available upon request. 2. Non-repetitive current pulse 8/20s exponential decay waveform according to IEC 61000-4-5. Rating and Characteristic Curves (CPDQT18V-HF) Fig.1 - 8/20s Peak Pulse Current Fig.2 - TLP Measurement Waveform Acc. IEC 61000-4-5 120% 25 tp=100ns 100%IPP: 8s 100% 20 80% -t e 15 60% 50%IPP: 20s 10 40% 5 20% 0% 0 0 10 20 30 40 0 10 20 30 Time, (s) TLP Voltage, (V) Fig.3 - Capacitance Characteristics 1.0 Ta=25C f=1MHz 0.8 0.6 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP072 Page 2 Comchip Technology CO., LTD. Junction Capacitance, CJ (pF) Percentage of Ipp TLP Current, (A)