Low Capacitance SMD ESD Protection Diode CPDT-5V0USP-HF RoHS Device Halogen Free Features SOT-23 - IEC61000-4-2 Level 4 ESD protection - Surface mount package. 0.118(3.00) 0.110(2.80) - High component density. 3 0.055(1.40) 0.047(1.20) Mechanical data 1 2 - Case: SOT-23 Standard package, molded 0.079(2.00) 0.071(1.80) plastic. - Terminals: Solderable per MIL-STD-750, 0.006(0.15) method 2026. 0.003(0.08) 0.045(1.15) - Mounting position: Any. 0.100(2.55) 0.035(0.90) 0.089(2.25) - Weight: 0.0078 grams(approx.). 0.004(0.10) 0.000(0.00) 0.020(0.50) Circuit diagram 0.020(0.50) 0.012(0.30) 0.012(0.30) 3 Dimensions in inches and (millimeter) 1 2 Maximum Rating (at TA=25C unless otherwise noted) Parameter Symbol Value Unit Conditions Peak pulse power TP = 8/20us PPP 76 W Peak pulse current TP = 8/20us IPP 4 A IEC 61000-4-2(air) 15 ESD capability kV ESD IEC 61000-4-2(contact) 8 Operation temperature range Tj -55~+150 C Storage temperature range TSTG -55~+150 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Working peak reverse voltage VRWM 5 V Breakdown voltage IT = 1mA VBR 6 V Reverse leakage current VRWM = 5V IR 0.5 uA Forward voltage IF = 10mA VF 1.2 V IPP = 1A, TP = 8/20us 12 Clamping voltage VC V IPP = 4A, TP = 8/20us 19 VR = 0V, f = 1MHz (I/O pin to I/O pin) pF CJ 0.3 0.45 Junction capacitance VR = 0V, f = 1MHz (I/O pin to GND pin) pF CJ 0.6 0.9 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP049 Page 1 Comchip Technology CO., LTD. Low Capacitance SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDT-5V0USP-HF) Fig.1 - 8/20us Peak Pulse Current Fig.2 - Power Rating Derating Curve Wave Form Acc. IEC 61000-4-5 120% Test Waveform 120 parameters Mounting on glass epoxy PCBs Ta=25C tf=8us Peak Valur Ipp td=20us 100 100% -t 80% 80 e 60% 60 40 40% td= t Ipp /2 20% 20 0% 0 0 5 10 15 20 25 30 0 25 50 75 100 125 150 Ambient Temperature, ( C ) Time, (us) Fig.4 - Clamping Voltage Vs. Fig.3 - Forward Characteristic Peak Pulse Current 20 10 8/20us waveform 16 150C 125C 12 75C 100C 1 8 50C 4 25C 0 0 0.5 0.6 0.7 0.8 0.9 1.0 1 2 3 4 Peak Pulse Current, (A) Forward Voltage, ( V ) Fig.5 - Capacitance Between Terminals Characteristics 0.9 I/O Pin to GND I/O Pin to I/O Pin 0.6 0.3 0.0 0 1 2 3 4 5 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP049 Page 2 Comchip Technology CO., LTD. Percentage of Ipp Capacitance Between Terminals, (pF) Forward Current, (mA) Power Rating (%) Clamping Voltage, (V)