SMD ESD Protection Diode Comchip S M D D i o d e S p e c i a l i s t CPDUC5V0USP-HF RoHS Device Halogen Free Features - Uni-directional ESD protection. 0603C/SOD-523F - Surface mount package. 0.071(1.80) - Low capacitance. 0.063(1.60) - Low Leakage current. - High component density. 0.039(1.00) 0.031(0.80) Mechanical data - Case: 0603C/SOD-523F standard package, 0.022(0.55) molded plastic. 0.018(0.45) - Terminals: Matte tin plated, Solderable per 0.022(0.55) 0.001(0.02) 0.016(0.40) MIL-STD-750, method 2026. Max. 0.043(1.10)BSC - Marking Code: Cathode band & E5P - Mounting position: Any. - Weight: 0.003 grams(approx.). 0.030(0.75) Circuit diagram 0.026(0.65) Dimensions in inches and (millimeter) Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Conditions Value Unit Peak pulse power TP = 8/20us PPP 60 W Peak pulse current TP = 8/20us IPP 3 A IEC 61000-4-2(air) 15 ESD capability kV ESD IEC 61000-4-2(contact) 8 Operation temperature range Tj -55~+150 C Storage temperature range TSTG -55~+150 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Working peak reverse voltage VRWM V 5 Forward voltage IF = 10mA VF 1.5 V Diode breakdown voltage IT = 1mA VBR 5.4 V Reverse current VRWM = 5V IR 0.1 1.0 uA IPP = 1A, TP = 8/20us 13 Clamping voltage VC V IPP = 3A, TP = 8/20us 20 Junction capacitance VR = 0V, f = 1MHz pF CJ 0.6 0.9 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-G7084 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode Comchip S M D D i o d e S p e c i a l i s t RATING AND CHARACTERISTIC CURVES (CPDUC5V0USP-HF) Fig.1 - 8/20us Peak Pulse Current Fig.2 - Power Rating Derating Curve Wa veform Acc. IEC 61000-4-5 120% Test Waveform 120 parameters Mounting on glass epoxy PCBs tf=8us Ta=25C Peak Valur Ipp td=20us 100% 100 -t 80% e 80 60% 60 40% 40 td= t Ipp /2 20% 20 0% 0 0 5 10 15 20 25 30 0 25 50 75 100 125 150 Ambient Temperature, ( C ) TTiimmee,, ((uuss)) Fig.3 - Clamping Voltage Vs. Fig.4 - Forward Voltage Vs. Peak Pulse Current Forward Current 30 100 25 150C 20 10 125C 100C 15 75C 50C 10 1 25C 5 0 0 1.0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 2.0 3.0 Forward voltage, (V) Peak Pulse Current, IPP (A) Fig.5 - Capacitance Between Terminals Characteristics 1.0 0.8 0.6 0.4 0.2 0 1 2 3 4 5 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-G7084 Page 2 Comchip Technology CO., LTD. Capacitance Between Terminals, (PF) Clamping Voltage,VC (V) Percentage of Ipp Power Rating, (%) Forward current, (mA)