CPDV5-3V3UP-HF Comchip

SMD ESD Protection Diode CPDV5-3V3UP-HF RoHS Device Halogen Free Features SOT-353 -IEC61000-4-2 Level 4 ESD protection 0.087(2.20) -Working voltage: 3.3V 0.079(2.00) -Low leakage current. 0.053(1.35) 0.045(1.15) -Low operating and clamping voltages. 0.055(1.40) 0.047(1.20) Mechanical data -Case: SOT-353 standard package ,molded plastic. 0.006(0.15) 0.003(0.08) -Terminals: Tin plated, solderable per 0.039(1.00) 0.035(0.90) 0.096(2.45) MIL-STD-750,method 2026. 0.085(2.15) -Mounting position: Any 0.018(0.46) -Weight: 0.0070 gram (approx.). 0.014(0.35) 0.004(0.10) 0.000(0.00) 0.010(0.26) 0.006(0.15) Circuit Diagram 5 4 Dimensions in inches and (millimeter) 1 2 3 Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Peak pulse power ( tp = 8/20 us) PPP 40 W Peak pulse current ( tp = 8/20 us) IPP 5 A ESD per IEC 61000-4-2(Air) 20 VESD kV ESD per IEC 61000-4-2(Contact) 15 O Operating temperature Tj -55 to +125 C O Storage temperature TSTG -55 to +125 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Reverse stand-off voltage VRWM 3.3 V Punch-through voltage IPT = 2uA VPT 3.5 V Snap-back voltage ISB = 50mA VSB 2.8 V Reverse leakage current VRWM = 3.3V IR 0.05 0.5 uA IPP = 1 A, tp=8/20us VC 5.5 V Clamping voltage IPP = 5 A, tp=8/20us VC 8.0 V Reverse clamping voltage IPPR = 1 A, tp=8/20us VCR 2.4 V Junction capacitance VR = 0 V, f = 1MHz Cj pF 12 16 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JP023 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDV5-3V3UP-HF) Fig.1 - Non-repetitive max. peak pulse power Fig.2 - Power rating derating curve vs. pulse time 110 1 100 90 80 70 60 0.1 50 40 30 20 10 0.01 0 0.1 1 10 100 1000 0 25 50 75 100 125 150 O Pulse duration-tp(us) Ambient temperature ( C) Fig.3 - Clamping voltage vs. Fig.4 - Forward voltage vs. peak pulse current Forward current 16 12 Waveform 14 Parameters: 10 tr=8us td=20us 12 8 10 8 6 Waveform 6 Parameters: 4 tr=8us td=20us 4 2 2 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Peak pulse current(A) Forward current(A) Fig.5 - Junction capacitance vs. reverse voltage 20 16 12 8 4 0 0 1 2 3 4 Reverse voltage (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JP023 Page 2 Comchip Technology CO., LTD. Normalized capacitance - Cj (pF) Clamping voltage (V) Max. peak pulse power-PPP(kW ) Forward voltage (V) Power rating (%)