SMD ESD Protection Diode CPDZ5V0C-HF RoHS Device Halogen Free 0201/DFN0603 Features - Bi-directional ESD protection. - IEC61000-4-2 Level 4 ESD protection. 0.015(0.37) 0.011(0.27) - Surface mount package. - Ultra small SMD package:0201 0.026(0.67) - High component density. 0.022(0.57) - Low clamping voltage. - Low leakage. 0.013(0.340) 0.011(0.275) Mechanical data 0.002(0.05) - Case: 0201/DFN0603 package, REF. molded plastic. 0.017(0.435) 0.001(0.03) 0.014(0.365) REF. - Terminals: Gold plated, solderable per MIL-STD-750, method 2026. 0.012(0.295) - Polarity: Color band denotes cathode end. 0.009(0.225) - Mounting position: Any Circuit diagram 0.008(0.195) 0.008(0.195) 0.005(0.125) 0.005(0.125) Dimensions in inches and (millimeter) Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Conditions Value Unit Peak pulse power TP = 8/20us PPP 30 W Peak pulse current TP = 8/20us IPP 2 A IEC 61000-4-2(air) 15 ESD capability ESD kV IEC 61000-4-2(contact) 8 Operation temperature range Tj -40~+125 C Storage temperature range TSTG -55~+150 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Working peak reverse voltage VRWM 5 V Breakdown voltage IT = 1mA VBR 5.5 9.5 V Reverse leakage current VRWM = 5V IR 100 nA IPP = 1A, TP = 8/20us 12 Clamping voltage VC V IPP = 2A, TP = 8/20us 15 Junction capacitance VR = 0V, f = 1MHz pF CJ 3 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JP043 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDZ5V0C-HF) Fig.1 - 8/20us Peak Pulse Current Fig.2 - Power Rating Derating Curve Waveform Acc. IEC 61000-4-5 120% 120 Test Waveform parameters Mounting on glass epoxy PCBs tf=8us Ta=25C Peak Valur Ipp td=20us 100 100% -t 80 80% e 60 60% 40 40% td= t Ipp / 2 20 20% 0 0% 0 5 10 15 20 25 30 0 25 50 75 100 125 Time, (us) Ambient Temperature, ( C ) Fig.3 - Clamping Voltage Vs. Fig.4 - Capacitance Between Peak Pulse Current Terminals Characteristics 5 20 f=1MHz 8/20us waveform TA=25C 4 15 3 10 2 5 1 0 0 0 1 2 3 4 5 1 1.5 2.0 Reverse Voltage, (V) Peak Pulse Current, IPP (A) Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 2 QW-JP043 Comchip Technology CO., LTD. Clamping Voltage,VC (V) Percentage of Ipp Power Rating, (%) Capacitance Between Terminals, (PF)