SMD ESD Protection Diode CPDZC5V0SPC-HF RoHS Device Halogen Free Features 0201/DFN0603 - Bi-directional ESD protection. - IEC 61000-4-2 ESD protection up to 15KV. - Surface mount package. 0.015(0.37) 0.011(0.27) - Ultra small SMD package:0201 - High component density. 0.026(0.67) 0.022(0.57) - Low clamping voltage. - Low leakage. - Ultra-Low capacitance: <0.2 pF 0.013(0.340) 0.011(0.275) Mechanical data 0.002(0.06) REF. - Case: 0201/DFN0603 package, molded plastic. 0.017(0.435) 0.002(0.04) 0.014(0.365) REF. - Terminals: Gold plated, solderable per MIL-STD-750, method 2026. 0.011(0.275) 0.008(0.205) - Polarity: Color band denotes cathode end. - Mounting position: Any - Weight: 0.0004 grams(approx.). 0.007(0.175) 0.007(0.175) 0.004(0.105) 0.004(0.105) Dimensions in inches and (millimeter) Circuit diagram Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Conditions Value Unit Peak pulse power TP = 8/20us PPP 30 W Peak pulse current TP = 8/20us (Note 1) IPP 2 A IEC 61000-4-2(air) ESD capability ESD 15 kV IEC 61000-4-2(contact) (Note 2) Operation temperature range Tj -40~+125 C Storage temperature range TSTG -55~+150 C Notes: 1. Non-repetitive current pulse 8/20us exponential decay waveform according to IEC 61000-4-5 2. ESD according to IEC61000-4-2 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-G7095 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Working peak reverse voltage VRWM 5 V Breakdown voltage IT = 1mA VBR 6 9 V Reverse leakage current VRWM = 5V IR 1 50 nA IPP = 1A, TP = 8/20us 11 Clamping voltage VC V IPP = 2A, TP = 8/20us (Note 1) 14 IPP = 8A, TP = 100ns 21 Clamping voltage VCL V IPP = 16A, TP = 100ns 30 Dynamic resistance RDYN 1.1 VR = 0V, f = 1MHz CJ 0.2 pF Junction capacitance Notes: 1. Non-repetitive current pulse 8/20us exponential decay waveform according to IEC 61000-4-5 RATING AND CHARACTERISTIC CURVES (CPDZC5V0SPC-HF) Fig.1 - 8/20us Peak Pulse Current Fig.2 - Power Rating Derating Curve Waveform Acc. IEC 61000-4-5 120% 120 Test Waveform parameters Mounting on glass epoxy PCBs tf=8us Ta=25C Peak Valur Ipp td=20us 100 100% -t 80 80% e 60 60% 40 40% td= t Ipp / 2 20 20% 0 0% 0 5 10 15 20 25 30 0 25 50 75 100 125 Time, (us) Ambient Temperature, ( C ) Fig.3 - Capacitance Between Fig.4 - Clamping Voltage Vs. Terminals Characteristics Peak Pulse Current 0.25 20 f=1MHz TA=25C 8/20us waveform 0.20 15 0.15 10 0.10 5 0.05 0.00 0 0 1 2 3 4 5 1 1.5 2.0 Reverse Voltage, (V) Peak Pulse Current, IPP (A) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 QW-G7095 Comchip Technology CO., LTD. Capacitance Between Terminals, (PF) Percentage of Ipp Power Rating, (%) Clamping Voltage,VC (V)