X-On Electronics has gained recognition as a prominent supplier of P6KE33A-G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. P6KE33A-G ESD Suppressors / TVS Diodes are a product manufactured by Comchip. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

P6KE33A-G Comchip

Hot P6KE33A-G electronic component of Comchip
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See Product Specifications
Part No.P6KE33A-G
Manufacturer: Comchip
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 600W, VRWM=33V
Datasheet: P6KE33A-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
187: USD 0.0292 ea
Line Total: USD 5.46 
Availability - 694
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ: 187  Multiples: 1
Pack Size: 1
Availability Price Quantity
694
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 187
Multiples : 1
187 : USD 0.0292
190 : USD 0.0288
192 : USD 0.0284
196 : USD 0.0278
250 : USD 0.0275
500 : USD 0.027

1686
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3118
10 : USD 0.2645
100 : USD 0.2033
500 : USD 0.1744
3000 : USD 0.1501
9000 : USD 0.1444
45000 : USD 0.1398

694
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 61
Multiples : 1
61 : USD 0.0284
100 : USD 0.0278
250 : USD 0.0275
500 : USD 0.027

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Vf - Forward Voltage
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the P6KE33A-G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the P6KE33A-G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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600W Transient Voltage Suppressor P6KE-G Series Breakdown Voltage: 6.8 to 600 Volts Peak Pulse Power: 600 Watts RoHS Device Features DO-15 - Glass passivated chip. - 600W peak pulse power capability with a 10/1000s waveform, repetitive rate (duty cycle):0.01% 0.033(0.84) DIA. 0.027(0.71) - Low leakage. 1.000(25.40) MIN. - Uni and Bidirectional unit. - Excellent clamping capability. - Very fast response time. R - UL recognized file E349157 0.300(7.63) - Range: P6KE6.8(C)A thru. P6KE47(C)A 0.230(5.85) 0.142(3.61) Mechanical Data DIA. 0.102(2.60) -Case: Molded plastic DO-15. 1.000(25.40) -Epoxy: UL 94V-0 rate flame retardant. MIN. -Lead: Solderable per MIL-STD-202, method 208 guranteed. -Polarity: Color band denotes cathode end except Bipolar. Dimensions in inches and (millimeter) -Monuting position: Any. -Weight: 0.402 gram (approx.) Maximum Ratings (TA=25C unless otherwise noted) Symbol Parameter Value Unit Peak power dissipation with a 10/1000 s PPP 600 W waveform (Note 1) Peak pulse current with a 10/1000 s waveform IPP See Next Table A (Note 1) Power dissipation on infinite heatsink at TL=75C PD 5.0 W Peak forward surge current, 8.3ms single half sine-wave unidirectional only IFSM 100 A (Note 2) Maximum instantaneous forward voltage at VF 3.5/5.0 V 50 A for unidirectional only (Note 3) Operating junction and storage TJ, TSTG -55 to +150 C temperature range NTOES: (1) Non-repetitive current pulse per fig.5 and derated above TA=25C per fig.1 (2) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum (3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V Company reserves the right to improve product design , functions and reliability without notice. REV:E QW-BTV06 Page 1 Comchip Technology CO., LTD.600W Transient Voltage Suppressor Rating and Characteristic Curves (P6KE-G Series) Fig.2 - Maximum Non-Repetitive Fig.1 - Pulse Derating Curve Surge Current 100 100 8.3mS single half sine-wave (JEDEC method) TJ=TJ Max. 80 75 60 50 40 25 20 0 0 0 25 50 75 100 125 150 175 1 10 100 Ambient Temperature, (C) Number of Cycle at 60Hz Fig.3 - Steady State Power Derating Curve Fig.4 - Peak Pulse Power Rating Curve 5.0 100 4.0 10 3.0 2.0 1 1.0 0 0.1 0 25 50 75 100 125 150 175 200 0.1 1 10 100 1000 10000 Lead Temperature, TL (C) Pulse Width, td (s) Fig.5 - Pulse Waveform Fig.6 - Typical Junction Capacitance 10000 TJ = 25C TR=10 s Pluse width(td) is defined as the Bi-directional point where the peak current zero bias 100 Peak value decays to 50% of Ipp (Ipp) Uni-directional 1000 zero bias Uni-directional Ipp VRWM Half Value= 2 100 50 10 / 1000 sec. waveform as defined by R.E.A. 10 Bi-directional VRWM td TJ=25C f=1.0MHz 1 0 0 1 2 3 4 1 10 100 1000 Time, (mS) Reverse Breakdown Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:E QW-BTV06 Page 2 Comchip Technology CO., LTD. Peak Pulse Derating in Percentage of Peak Pulse Current, (%) Steady State Power Dissipation, (W) Peak Power or Current, (%) Junction Capacitance, (pF) Peak Power, (kW) Peak Forward Surge Current, (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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