SMD Schottky Barrier Diodes RB751V-40 Io = 30 mA VR = 30 Volts RoHS Device SOD-323 Features 0.108 (2.75) - Low current rectifier. 0.100 (2.55) - Low voltage, low inductance. 0.014 (0.35) 0.055 (1.40) 0.010 (0.25) 0.047 (1.20) - For power supply. 0.071 (1.80) 0.063 (1.60) Mechanical data 0.035 (0.90) 0.031 (0.80) - Case: SOD-323, Standard package, 0.006 (0.150) 0.039 (1.00) molded plastic. 0.003 (0.080) MAX. - Terminals: Solderable per MIL-STD-750, 0.004 (0.10) 0.019 (0.475)REF 0.000 (0.00) method 2026 - Mounting position: Any Dimensions in inches and (millimeter) - Weight: 0.01 grams(approx.) Circuit diagram Maximum Ratings (at Ta=25C unless otherwise noted) Parameter Conditions Symbol Limit Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 30 V Mean rectifying current IO 30 mA 8.3ms single half sine-wave Non-repetitive peak forward surge current superimposed on rate load IFSM 0.2 A (JEDEC method) Power dissipation PD 200 mW Thermal resistance Junction to ambient RJA 500 C/W Junction temperature range TJ -40 ~ +125 C Storage temperature range TSTG -55 ~ +150 C Electrical Characteristics (at Ta=25C unless otherwise noted) Symbol Typ. Parameter Conditions Min. Max. Unit Forward voltage IF=1mA VF 0.37 V A Reverse current VR=30V IR 0.50 Capacitance between terminals pF VR=1V, f=1MHz CT 2 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BB029 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Diodes RATING AND CHARACTERISTIC CURVES (RB751V-40) Fig.1 - Power Derating Curve Fig.2 - Capacitance Characteristics 250 4 TJ=25C f=1MHz 200 3 150 2 100 1 50 0 0 0 25 50 75 100 125 0 5 10 15 20 Ambient Temperature, TA (C) Reverse Voltage, VR (V) Fig.3 - Forward Characteristics Fig.4 - Reverse Characteristics 100 100 10 TJ=100C 10 TJ=100C 1.0 TJ=25C 1.0 TJ=25C 0.1 0.1 0.01 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 35 40 Forward Voltage, VF (V) Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BB029 Page 2 Comchip Technology CO., LTD. Forward Current, IF (mA) Power Dissipation, PD (mW) Reverse Current, IR (A) Capacitance Between Terminals, CT (pF)