X-On Electronics has gained recognition as a prominent supplier of TV04A480JB-G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. TV04A480JB-G ESD Suppressors / TVS Diodes are a product manufactured by Comchip. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

TV04A480JB-G Comchip

TV04A480JB-G electronic component of Comchip
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See Product Specifications
Part No.TV04A480JB-G
Manufacturer: Comchip
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes TVS, BI-DIRECTIONAL 400W 48V 5%
Datasheet: TV04A480JB-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5434 ea
Line Total: USD 0.54 
Availability - 4016
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4016
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5434
10 : USD 0.3828
100 : USD 0.1932
1000 : USD 0.134
5000 : USD 0.1027
10000 : USD 0.0905
25000 : USD 0.0833
50000 : USD 0.0821

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Vf - Forward Voltage
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TV04A480JB-G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TV04A480JB-G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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SMD Transient Voltage Suppressor TV04A5V0-G Thru. TV04A441-G Working Peak Reverse Voltage: 5.0 to 440 Volts Power Dissipation: 400 Watts RoHS Device Features SMA/DO-214AC - Glass passivated chip. - 400W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle):0.01% 0.179(4.55) 0.161(4.10) - Low leakage. - Uni and Bidirectional unit. 0.064(1.63) 0.109(2.76) 0.048(1.23) 0.099(2.51) - Excellent clamping capability. - Very fast response time. R - UL recognized file E349157 - Range: TV04A5V0J(B) thru. TV04A240J(B) 0.206(5.22) 0.192(4.87) 0.012(0.30) 0.006(0.15) Mechanical data 0.089(2.26) 0.077(1.96) - Epoxy: UL 94V-0 rate flame retardant. 0.008(0.20) 0.059(1.51) 0.030(0.75) 0.000(0.00) - Case: SMA/DO-214AC, molded plastic. - Terminals: solderable per MIL-STD-750, method 2026. Dimensions in inches and (millimeter) - Polarity: Color band denotes cathode end execpt bipolar. - Weight: 0.069 gram (approx.) Maximum Ratings and Electrical Characteristics O Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol Characteristics Value Units Peak power dissipation on 10/1000 S PPP 400 W waveform (Note1) Peak pulse current on 10/1000S IPP See Next Table A waveform (Note 1) Steady state power dissipation at TL=75C PD 1.0 W Peak forward surge current, 8.3mS single IFSM 40 A half sine-wave unidirectional only (Note 2) Maximum instantaneous forward voltage VF 3.5/5.0 V at 25.0A for unidirectional only (Note 3) Operating junction and storage temperature TJ, TSTG -55 to +150 C No tes 1: . Non-repetitive current pulse, per Fig. 5 and derated above TA=25C, per Fig. 1. 2. Measured on 8.3mS single half sine-wave or equare wave,duty cycle=4 pulses per minute maximum. 3. VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V Company reserves the right to improve product design , functions and reliability without notice. REV:G QW-BTV01 Page 1 Comchip Technology CO., LTD.SMD Transient Voltage Suppressor RATING AND CHARACTERISTIC CURVES (TV04A5V0-G thru TV04A441-G) Fig.1 - Pulse Derating Curve Fig.2 - Maximum Non-Repetitive Surge Current 100 50 8.3mS single half sine-wave (JEDEC method) TJ=TJ , max. 80 40 60 30 40 20 20 10 0 0 0 25 50 75 100 125 150 175 200 1 10 100 Ambient Temperature, TA (C) Number of Cycles at 60Hz Fig.3 - Steady State Power Fig.4 - Peak Pulse Power Rating Curve Derating Curve 1.0 100 0.8 10 0.6 0.4 1.0 0.2 0.1 0.0 0.1 1 10 100 1000 10000 0 25 50 75 100 125 150 175 Pulse Width, td (s) Lead Temperature, TL (C) Fig.5 - Pulse Waveforem Fig.6 - Typical Junction Capacitance 10000 TJ = 25C Tr=10 s Pluse width(td) is defined as the Bi-directional point where the peak current zero bias 100 Peak value decays to 50% of Ipp (Ipp) 1000 Uni-directional zero bias Ipp Half Value= 2 Uni-directional 100 VRWM 50 10 / 1000 sec. waveform as defined by R.E.A. 10 Bi-directional VRWM td TJ=25C f=1.0MHz 1 0 1 10 100 1000 0 1.0 2.0 3.0 4.0 Time, (ms) Reverse Breakdown Voltage, VBR (V) Company reserves the right to improve product design , functions and reliability without notice. REV:G QW-BTV01 Page 2 Comchip Technology CO., LTD. Peak Pulse Derating in Percentage Peak Pulse Current, (%) Steady Power Dissipation, (W) of Peak Power or Current, (%) Junction Capacitance, CJ (pF) Peak Power, (kW ) Peak Forward Surge Current, (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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