X-On Electronics has gained recognition as a prominent supplier of TV06B171JB-G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. TV06B171JB-G ESD Suppressors / TVS Diodes are a product manufactured by Comchip. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

TV06B171JB-G Comchip

TV06B171JB-G electronic component of Comchip
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Part No.TV06B171JB-G
Manufacturer: Comchip
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes SMB TVS 600W 170V 5% BI-DIRECTIONAL
Datasheet: TV06B171JB-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.566 ea
Line Total: USD 0.57 
Availability - 2354
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2354
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.566
10 : USD 0.4874
100 : USD 0.3396
500 : USD 0.2645
1000 : USD 0.2148
3000 : USD 0.1767
9000 : USD 0.1605

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Vf - Forward Voltage
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TV06B171JB-G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TV06B171JB-G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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SMD Transient Voltage Suppressor TV06B5V0-G Thru. TV06B441-G Working Peak Reverse voltage: 5.0 to 440Volts Power Dissipation: 600 Watts RoHS Device Features SMB/DO-214AA -Glass passivated chip. -600W peak pulse power capability with a 10/1000s -waveform, repetitive rate (duty cycle): 0.01%. -Low leakage. 0.155(3.94) 0.087(2.20) 0.130(3.30) 0.077(1.96) -Uni and Bidirectional unit. -Excellent clamping capability. 0.191(4.85) -Very fast response time. 0.171(4.35) -UL recognized file E349157 R 0.012(0.30) -Range: TV06B5V0J(B) thru. TV06B400J(B) 0.006(0.15) 0.096(2.44) Mechanical Data 0.083(2.13) -Case: JEDEC DO-214AA, molded plastic. 0.008(0.20) 0.060(1.52) 0.001(0.02) 0.030(0.75) -Epoxy: UL 94V-0 rate flame retardant. 0.216(5.50) 0.201(5.10) -Terminals: solderable per MIL-STD-750, method 2026 -Polarity: Color band denotes cathode end Dimensions in inches and (millimeter) except Bipolar. -Mounting position: Any. -Weight: 0.108 gram (approx.) Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Parameter Symbol Value Units Peak power dissipation with a 10/1000 s PPP 600 Watts waveform (Note 1) Peak pulse current with a 10/1000 s IPP See Next Table A waveform (Note 1) Power dissipation on infinite heatsink at PD 5.0 Watts TL=75C Peak forward surge current, 8.3ms single IFSM 100 A half sine-wave unidirectional only (Note 2) Maximum instantaneous forward voltage VF 3.5 5.0 V at 50 A for unidirectional only (Note 3) Operating junction and TJ, TSTG -55 to +150 C Storage temperature range Note: 1. Non-repetitive current pulse per Fig. 5 and derated above TA=25C per Fig.1 2. Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum. 3. VF<3.5V for devices of VBR <200V and VF <5.0V for devices of VBR >201V Company reserves the right to improve product design , functions and reliability without notice. REV:G QW-BTV02 Page 1 Comchip Technology CO., LTD.SMD Transient Voltage Suppressor Rating and Characteristics Curves (TV06B5V0-G Thru. TV06B441-G) Fig.1 - Pulse Derating Curve Fig.2 - Max. Non-Repetitive Surge Current 140 100 8.3mS single half Mounted on 5mm5mm sine-wave (JEDEC copper pads method) 120 TJ=TJ Max. 80 100 80 60 60 40 40 20 20 0 0 0 25 50 75 100 125 150 175 1 10 100 Ambient Temperature, (C) Number of Cycle at 60Hz Fig.3 - Steady State Power Derating Curve Fig.4 - Peak Pulse Power Rating Curve 5.0 100 4.0 10 3.0 2.0 1 1.0 0 0.1 0 25 50 75 100 125 150 175 200 0.1 1 10 100 1000 10000 Lead Temperature, (C) Pulse Width, ( s) Fig.5 - Pulse Waveform Fig.6 - Typical Junction Capacitance 10000 TJ = 25C TR=10 s Pluse width(td) is defined as the Bi-directional zero bias point where the peak current 100 Peak value decays to 50% of Ipp (Ipp) Uni-directional 1000 zero bias Uni-directional Ipp VRWM Half Value= 2 100 50 10 / 1000 sec. waveform as defined by R.E.A. 10 Bi-directional VRWM O td TJ=25 C f=1.0MHz 1 0 0 1 2 3 4 1 10 100 1000 Time, (mS) Breakdown Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:G QW-BTV02 Page 2 Comchip Technology CO., LTD. Peak Pulse Derating in Percentage Peak Pulse Current, (%) Steady State Power Dissipation, (W) of Peak Power or Current, (%) Junction Capacitance, (pF) Peak Power, (kW) Peak Forward Surge Current, (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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