X-On Electronics has gained recognition as a prominent supplier of TV06B260JB-G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. TV06B260JB-G ESD Suppressors / TVS Diodes are a product manufactured by Comchip. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

TV06B260JB-G Comchip

TV06B260JB-G electronic component of Comchip
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Part No.TV06B260JB-G
Manufacturer: Comchip
Category: ESD Suppressors / TVS Diodes
Description: TVS Diodes - Transient Voltage Suppressors TVS BI-DIRECTIONAL 600W 26V 5%
Datasheet: TV06B260JB-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4928 ea
Line Total: USD 0.49 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4928
10 : USD 0.363
100 : USD 0.2541
500 : USD 0.2046
1000 : USD 0.1848
3000 : USD 0.1606
9000 : USD 0.1529

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Peak Surge Current
Brand
Mounting Style
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
Vf - Forward Voltage
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TV06B260JB-G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TV06B260JB-G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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SMD Transient Voltage Suppressor TV06B5V0-G Thru. TV06B441-G Working Peak Reverse voltage: 5.0 to 440Volts Power Dissipation: 600 Watts RoHS Device Features SMB/DO-214AA -Glass passivated chip. -600W peak pulse power capability with a 10/1000s -waveform, repetitive rate (duty cycle): 0.01%. -Low leakage. 0.155(3.94) 0.087(2.20) 0.130(3.30) 0.077(1.96) -Uni and Bidirectional unit. -Excellent clamping capability. 0.191(4.85) -Very fast response time. 0.171(4.35) -UL recognized file E349157 R 0.012(0.30) -Range: TV06B5V0J(B) thru. TV06B400J(B) 0.006(0.15) 0.096(2.44) Mechanical Data 0.083(2.13) -Case: JEDEC DO-214AA, molded plastic. 0.008(0.20) 0.060(1.52) 0.001(0.02) 0.030(0.75) -Epoxy: UL 94V-0 rate flame retardant. 0.216(5.50) 0.201(5.10) -Terminals: solderable per MIL-STD-750, method 2026 -Polarity: Color band denotes cathode end Dimensions in inches and (millimeter) except Bipolar. -Mounting position: Any. -Weight: 0.108 gram (approx.) Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Parameter Symbol Value Units Peak power dissipation with a 10/1000 s PPP 600 Watts waveform (Note 1) Peak pulse current with a 10/1000 s IPP See Next Table A waveform (Note 1) Power dissipation on infinite heatsink at PD 5.0 Watts TL=75C Peak forward surge current, 8.3ms single IFSM 100 A half sine-wave unidirectional only (Note 2) Maximum instantaneous forward voltage VF 3.5 5.0 V at 50 A for unidirectional only (Note 3) Operating junction and TJ, TSTG -55 to +150 C Storage temperature range Note: 1. Non-repetitive current pulse per Fig. 5 and derated above TA=25C per Fig.1 2. Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum. 3. VF<3.5V for devices of VBR <200V and VF <5.0V for devices of VBR >201V Company reserves the right to improve product design , functions and reliability without notice. REV:G QW-BTV02 Page 1 Comchip Technology CO., LTD.SMD Transient Voltage Suppressor Rating and Characteristics Curves (TV06B5V0-G Thru. TV06B441-G) Fig.1 - Pulse Derating Curve Fig.2 - Max. Non-Repetitive Surge Current 140 100 8.3mS single half Mounted on 5mm5mm sine-wave (JEDEC copper pads method) 120 TJ=TJ Max. 80 100 80 60 60 40 40 20 20 0 0 0 25 50 75 100 125 150 175 1 10 100 Ambient Temperature, (C) Number of Cycle at 60Hz Fig.3 - Steady State Power Derating Curve Fig.4 - Peak Pulse Power Rating Curve 5.0 100 4.0 10 3.0 2.0 1 1.0 0 0.1 0 25 50 75 100 125 150 175 200 0.1 1 10 100 1000 10000 Lead Temperature, (C) Pulse Width, ( s) Fig.5 - Pulse Waveform Fig.6 - Typical Junction Capacitance 10000 TJ = 25C TR=10 s Pluse width(td) is defined as the Bi-directional zero bias point where the peak current 100 Peak value decays to 50% of Ipp (Ipp) Uni-directional 1000 zero bias Uni-directional Ipp VRWM Half Value= 2 100 50 10 / 1000 sec. waveform as defined by R.E.A. 10 Bi-directional VRWM O td TJ=25 C f=1.0MHz 1 0 0 1 2 3 4 1 10 100 1000 Time, (mS) Breakdown Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:G QW-BTV02 Page 2 Comchip Technology CO., LTD. Peak Pulse Derating in Percentage Peak Pulse Current, (%) Steady State Power Dissipation, (W) of Peak Power or Current, (%) Junction Capacitance, (pF) Peak Power, (kW) Peak Forward Surge Current, (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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