X-On Electronics has gained recognition as a prominent supplier of TVP06B130CA-HF ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. TVP06B130CA-HF ESD Suppressors / TVS Diodes are a product manufactured by Comchip. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

TVP06B130CA-HF Comchip

TVP06B130CA-HF electronic component of Comchip
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See Product Specifications
Part No.TVP06B130CA-HF
Manufacturer: Comchip
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes TVS DIODE 11.1VWM 18.2VC SMB
Datasheet: TVP06B130CA-HF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5301 ea
Line Total: USD 0.53 
Availability - 14440
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14440
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5301
10 : USD 0.4576
100 : USD 0.3224
500 : USD 0.2584
1000 : USD 0.2209
3000 : USD 0.2029
9000 : USD 0.1871
24000 : USD 0.1787

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Vf - Forward Voltage
Cnhts
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TVP06B130CA-HF from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TVP06B130CA-HF and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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SMD Transient Voltage Suppressor TVP06B6V8-HF Thru. TVP06B601-HF Breakdown Voltage: 6.8 to 600Volts Power Dissipation: 600 Watts RoHS Device Halogen Free SMB/DO-214AA Features - Glass passivated chip. - 600W peak pulse power capability with a 10/1000s waveform, repetitive rate (duty cycle):0.01% 0.155(3.94) 0.087(2.20) - Low leakage. 0.130(3.30) 0.077(1.96) - Uni and Bidirectional unit. 0.191(4.85) - Excellent clamping capability. 0.171(4.35) - Very fast response time. R - UL recognized file E349157 0.012(0.30) - Range: TVP06B6V8(C)A thru. TVP06B510(C)A 0.006(0.15) 0.096(2.44) Mechanical Data 0.084(2.13) -Case: Molded plastic, JEDEC SMB/DO-214AA 0.008(0.20) 0.060(1.52) 0.001(0.02) 0.030(0.75) -Epoxy: UL 94V-0 rate flame retardant. 0.216(5.50) 0.201(5.10) -Lead: solderable per MIL-STD-750, method 2026 -Polarity: Color band denotes cathode end except Bipolar. Dimensions in inches and (millimeter) -Weight: 0.108 gram (approx.) Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol Parameter Value Units Peak power dissipation with a 10/1000 s PPP 600 W waveform (Note 1 ) Peak pulse current with a 10/1000s IPP See Next Table A waveform (Note 1) Power dissipation on infinite heatsink PD 5.0 W at TL=75C Peak forward surge current, 8.3ms single half IFSM 100 A sine-wave uni-directional only (Note 2) Maximum instantaneous forward voltage at VF 3.5/5.0 V 25.0A for uni-directional only (Note 3) Operation junction temperature TJ -55 to +150 C Storage temperature range TSTG -55 to +150 C Note: 1. Non-repetitive current pulse, per Fig.5 and derated above TA=25C per Fig.1 2. Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulse per minute maximum. 3. VF<3.5V for devices of VBR <200V and VF <5.0V for devices of VBR >201V. Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 1 QW-JTV14 Comchip Technology CO., LTD.SMD Transient Voltage Suppressor Rating and Characteristics Curves (TVP06B6V8-HF Thru. TVP06B601-HF) Fig.2 - Maximum Non-Repetitive Fig.1 - Pulse Derating Curve Surge Current 140 100 8.3mS single half sine-wave (JEDEC 120 method) TJ=TJ Max. 80 100 80 60 60 40 40 20 20 0 0 0 25 50 75 100 125 150 175 1 10 100 Ambient Temperature, (C) Number of Cycle at 60Hz Fig.3 - Steady State Power Derating Curve Fig.4 - Peak Pulse Power Rating Curve 5.0 100 4.0 10 3.0 2.0 1 1.0 0 0.1 0 25 50 75 100 125 150 175 200 0.1 1 10 100 1000 10000 Lead Temperature, TL (C) Pulse Width, td (s) Fig.5 - Pulse Waveform Fig.6 - Typical Junction Capacitance 10000 TJ = 25C TR=10 s Pluse width(td) is defined as the Bi-directional zero bias point where the peak current 100 Peak value decays to 50% of Ipp (Ipp) Uni-directional 1000 zero bias Uni-directional Ipp VRWM Half Value= 2 100 50 10 / 1000 sec. waveform as defined by R.E.A. 10 Bi-directional VRWM td TJ=25C f=1.0MHz 1 0 0 1 2 3 4 1 10 100 1000 Time, (mS) Reverse Breakdown Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 2 QW-JTV14 Comchip Technology CO., LTD. Peak Pulse Derating in Percentage of Peak Pulse Current, (%) Steady State Power Dissipation, (W) Peak Power or Current, (%) Junction Capacitance, (pF) Peak Power, (kW) Peak Forward Surge Current, (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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