Features Single 2.3V - 3.6V or 2.7V - 3.6V Supply Serial Peripheral Interface (SPI) Compatible Supports SPI Modes 0 and 3 70 MHz Maximum Clock Frequency Flexible, Uniform Erase Architecture 4-Kbyte Blocks 32-Kbyte Blocks 64-Kbyte Blocks 4-megabit Full Chip Erase Individual Sector Protection with Global Protect/Unprotect Feature 2.3-volt or One 16-Kbyte Top Sector Two 8-Kbyte Sectors 2.7-volt One 32-Kbyte Sector Seven 64-Kbyte Sectors Minimum Hardware Controlled Locking of Protected Sectors via WP pin Flexible Programming Options SPI Serial Flash Byte/Page Program (1 to 256 Bytes) Sequential Program Mode Capability Memory Fast Program and Erase Times 1.2 ms Typical Page Program (256 Bytes) Time 50 ms Typical 4-Kbyte Block Erase Time AT25DF041A 250 ms Typical 32-Kbyte Block Erase Time 400 ms Typical 64-Kbyte Block Erase Time Automatic Checking and Reporting of Erase/Program Failures JEDEC Standard Manufacturer and Device ID Read Methodology Low Power Dissipation 5 mA Active Read Current (Typical) 15 A Deep Power-down Current (Typical) Endurance: 100,000 Program/Erase Cycles Data Retention: 20 Years Complies with Full Industrial Temperature Range Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options 8-lead SOIC (150-mil and 208-mil Wide) 8-pad Ultra Thin DFN (5 x 6 x 0.6 mm) 1. Description The AT25DF041A is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DF041A, with its erase granularity as small as 4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional data storage EEPROM devices. 3668FDFLASH11/2013The physical sectoring and the erase block sizes of the AT25DF041A have been optimized to meet the needs of todays code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own protected sectors, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density. The AT25DF041A also offers a sophisticated method for protecting individual sectors against erroneous or malicious program and erase operations. By providing the ability to individually pro- tect and unprotect sectors, a system can unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securely protected. This is useful in applica- tions where program code is patched or updated on a subroutine or module basis, or in applications where data storage segments need to be modified without running the risk of errant modifications to the program code segments. In addition to individual sector protection capabili- ties, the AT25DF041A incorporates Global Protect and Global Unprotect features that allow the entire memory array to be either protected or unprotected all at once. This reduces overhead during the manufacturing process since sectors do not have to be unprotected one-by-one prior to initial programming. Specifically designed for use in 2.5-volt or 3-volt systems, the AT25DF041A supports read, pro- gram, and erase operations with a supply voltage range of 2.3V to 3.6V or 2.7V to 3.6V. No separate voltage is required for programming and erasing. 2 AT25DF041A 3668FDFLASH11/2013