X-On Electronics has gained recognition as a prominent supplier of AT25DF081A-MH-Y NOR Flash across the USA, India, Europe, Australia, and various other global locations. AT25DF081A-MH-Y NOR Flash are a product manufactured by Dialog Semiconductor. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

AT25DF081A-MH-Y Dialog Semiconductor

AT25DF081A-MH-Y electronic component of Dialog Semiconductor
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Part No.AT25DF081A-MH-Y
Manufacturer: Dialog Semiconductor
Category: NOR Flash
Description: Flash Memory 8M, 2.7-3.6V, 100Mhz Serial Flash
Datasheet: AT25DF081A-MH-Y Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.9635 ea
Line Total: USD 1.96 
Availability - 2740
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2740
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.9635
10 : USD 1.5939
570 : USD 1.4553
1140 : USD 1.4322
5130 : USD 1.4091
25080 : USD 1.3975

   
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We are delighted to provide the AT25DF081A-MH-Y from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AT25DF081A-MH-Y and other electronic components in the NOR Flash category and beyond.

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Features Single 2.7V - 3.6V Supply Serial Peripheral Interface (SPI) Compatible Supports SPI Modes 0 and 3 Supports RapidS Operation Supports Dual-Input Program and Dual-Output Read Very High Operating Frequencies 100MHz for RapidS 85MHz for SPI 8-Mbit Clock-to-Output (t ) of 5ns Maximum V Flexible, Optimized Erase Architecture for Code + Data Storage Applications 2.7V Minimum Uniform 4-Kbyte Block Erase Uniform 32-Kbyte Block Erase SPI Serial Flash Uniform 64-Kbyte Block Erase Memory Full Chip Erase Individual Sector Protection with Global Protect/Unprotect Feature 16 Sectors of 64-Kbytes Each AT25DF081A Hardware Controlled Locking of Protected Sectors via WP Pin Sector Lockdown Make Any Combination of 64-Kbyte Sectors Permanently Read-Only 128-Byte Programmable OTP Security Register Flexible Programming Byte/Page Program (1- to 256-Bytes) Fast Program and Erase Times 1.0ms Typical Page Program (256 Bytes) Time 50ms Typical 4-Kbyte Block Erase Time 250ms Typical 32-Kbyte Block Erase Time 400ms Typical 64-Kbyte Block Erase Time Automatic Checking and Reporting of Erase/Program Failures Software Controlled Reset JEDEC Standard Manufacturer and Device ID Read Methodology Low Power Dissipation 5mA Active Read Current (Typical at 20MHz) 5A Deep Power-Down Current (Typical) Endurance: 100,000 Program/Erase Cycles Data Retention: 20 Years Complies with Full Industrial Temperature Range Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options 8-lead SOIC (150-mil and 208-mil wide) 8-pad Ultra Thin DFN (5 x 6 x 0.6mm) 8715ESFLSH11/20171. Description The Adesto AT25DF081A is a serial interface Flash memory device designed for use in a wide variety of high-vol- ume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DF081A, with its erase granularity as small as 4-Kbytes, makes it ideal for data storage as well, eliminating the need for additional data storage EEPROM devices. The physical sectoring and the erase block sizes of the AT25DF081A have been optimized to meet the needs of today s code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own protected sectors, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density. The AT25DF081A also offers a sophisticated method for protecting individual sectors against erroneous or mali- cious program and erase operations. By providing the ability to individually protect and unprotect sectors, a system can unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securely protected. This is useful in applications where program code is patched or updated on a subroutine or module basis, or in applications where data storage segments need to be modified without running the risk of errant modifications to the program code segments. In addition to individual sector protection capabilities, the AT25DF081A incorporates Global Protect and Global Unprotect features that allow the entire memory array to be either protected or unprotected all at once. This reduces overhead during the manufacturing process since sectors do not have to be unprotected one-by-one prior to initial programming. To take code and data protection to the next level, the AT25DF081A incorporates a sector lockdown mechanism that allows any combination of individual 64-Kbyte sectors to be locked down and become permanently read-only. This addresses the need of certain secure applications that require portions of the Flash memory array to be per- manently protected against malicious attempts at altering program code, data modules, security information, or encryption/decryption algorithms, keys, and routines. The device also contains a specialized OTP (One-Time Pro- grammable) Security Register that can be used for purposes such as unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc. Specifically designed for use in 3-volt systems, the AT25DF081A supports read, program, and erase operations with a supply voltage range of 2.7V to 3.6V. No separate voltage is required for programming and erasing. 2 AT25DF081A 8715ESFLSH11/2017

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Adesto Technologies
Dialog Semiconductor GmbH
DLG
Echelon / Adesto
Echelon Corporation
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