X-On Electronics has gained recognition as a prominent supplier of AT25PE16-SHF-B NOR Flash across the USA, India, Europe, Australia, and various other global locations. AT25PE16-SHF-B NOR Flash are a product manufactured by Dialog Semiconductor. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

AT25PE16-SHF-B Dialog Semiconductor

AT25PE16-SHF-B electronic component of Dialog Semiconductor
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Part No.AT25PE16-SHF-B
Manufacturer: Dialog Semiconductor
Category: NOR Flash
Description: NOR Flash 16Mb 1.65V-3.6V SPI 85MHz IND TEMP
Datasheet: AT25PE16-SHF-B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.7604 ea
Line Total: USD 2.76 
Availability - 912
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
912
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 2.7604
10 : USD 2.3446
90 : USD 1.8134
540 : USD 1.8018

   
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We are delighted to provide the AT25PE16-SHF-B from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AT25PE16-SHF-B and other electronic components in the NOR Flash category and beyond.

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AT25PE16 16-Mbit DataFlash-L Page Erase Serial Flash Memory DATASHEET Features Single 2.3V - 3.6V supply Serial Peripheral Interface (SPI) compatible Supports SPI modes 0 and 3 Supports RapidS operation Continuous read capability through entire array Up to 85MHz Low-power read option up to 15MHz Clock-to-output time (t ) of 6ns maximum V User configurable page size 512 bytes per page (default) 528 bytes per page (customer selectable option) Two fully independent SRAM data buffers (512/528 bytes) Allows receiving data while reprogramming the main memory array Flexible programming options Byte/Page Program (1 to 512/528 bytes) directly into main memory Buffer Write Buffer to Main Memory Page Program Flexible erase options Page Erase (512/528 bytes) Block Erase (4KB) Sector Erase (128KB) Chip Erase (16-Mbits) 128-byte Security Register 128 bytes factory programmed with a unique identifier Hardware and software controlled reset options JEDEC Standard Manufacturer and Device ID Read Low-power dissipation 300nA Ultra-Deep Power-Down current (typical) 5A Deep Power-Down current (typical) 25A Standby current (typical) 7mA Active Read current (typical) Endurance: 100,000 program/erase cycles per page minimum Data retention: 20 years Complies with full industrial temperature range Green (Pb/Halide-free/RoHS compliant) packaging options 8-lead SOIC (0.150 wide and 0.208 wide) 8-pad Ultra-thin DFN (5 x 6 x 0.6mm) DS-25PE16-143C8/2018Description The Adesto AT25PE16 is a 2.3V or 2.5V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications. The AT25PE16 also supports the RapidS serial interface for applications requiring very high speed operation. Its 17,301,504 bits of memory are organized as 4,096 pages of 512 bytes (default) or 528 bytes (customer option) each. In addition to the main memory, the AT25PE16 also contains two SRAM buffers of 512/528 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a system s ability to write a continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pad memory, 2 and E PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the Adesto DataFlash-L uses a serial interface to sequentially access its data. The simple sequential access dramatically reduces active pin count, facilitates simplified hardware layout, increases system reliability, minimizes switching noise, and reduces package size. The device is optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage, and low-power are essential. To allow for simple in-system re-programmability, the AT25PE16 does not require high input voltages for programming. The device operates from a single 2.3V to 3.6V or 2.5V to 3.6V power supply for the erase and program and read operations. The AT25PE16 is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK). All programming and erase cycles are self-timed. 1. Pin Configurations and Pinouts Figure 1-1. Pinouts 8-lead SOIC 8-pad UDFN Top View Top View (through package) CS 1 8 Vcc CS 1 8 Vcc SO 2 7 RESET SO 2 7 RESET WP 3 6 SCK WP 3 6 SCK GND 4 5 SI GND 4 5 SI Note: 1. The metal pad on the bottom of the UDFN package is not internally connected to a voltage potential. This pad can be a no connect or connected to GND. AT25PE16 2 DS-25PE16-143C8/2018

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Adesto Technologies
Dialog Semiconductor GmbH
DLG
Echelon / Adesto
Echelon Corporation
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