AT25XE011 1-Mbit, 1.65V Minimum SPI Serial Flash Memory with Dual-Read Support Features Single 1.65V - 3.6V Supply Serial Peripheral Interface (SPI) Compatible Supports SPI Modes 0 and 3 Supports Dual Output Read 104MHz Maximum Operating Frequency Clock-to-Output (t ) of 6 ns V Flexible, Optimized Erase Architecture for Code + Data Storage Applications Small (256-Byte) Page Erase Uniform 4-Kbyte Block Erase Uniform 32-Kbyte Block Erase Full Chip Erase Hardware Controlled Locking of Protected Sectors via WP Pin 128-byte, One-Time Programmable (OTP) Security Register 64 bytes factory programmed with a unique identifier 64 bytes user programmable Flexible Programming Byte/Page Program (1 to 256 Bytes) Fast Program and Erase Times 2ms Typical Page Program (256 Bytes) Time 50ms Typical 4-Kbyte Block Erase Time 400ms Typical 32-Kbyte Block Erase Time Automatic Checking and Reporting of Erase/Program Failures Software Controlled Reset JEDEC Standard Manufacturer and Device ID Read Methodology Low Power Dissipation 200nA Ultra Deep Power Down current (Typical) 4.5A Deep Power-Down Current (Typical) 25uA Standby current (Typical) 3.5mA Active Read Current (Typical) Endurance: 100,000 Program/Erase Cycles Data Retention: 20 Years Temperature Range:-10C to +85C (1.65V to 3.6V), -40C to +85 (1.7V to 3.6V) Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options 8-lead SOIC (150-mil) 8-pad Ultra Thin DFN (2 x 3 x 0.6 mm) 8-lead TSSOP Package (1) 8-ball WLCSP Note: 1. Contact factory for availability. DS-25XE011059G6/20171. Description The Adesto AT25XE011 is a highly optimized ultra-low energy serial interface Flash memory device designed for use in a wide variety of high-volume low energy consumer and industrial applications. The AT25XE011 device has been optimized by design to meet the needs of today s connected applications in the Internet of Things market space. The granular Page Erase and Block Erase architecture allows the memory space to be used much more efficiently supporting data storage and over the air updates. Key program code subroutines and data storage segments need to reside by themselves in their own separate erase regions, and with a granular architecture the wasted and unused memory space that occurs with large sectored and large block erase flash memory devices can be greatly reduced. The resulting improvement to software efficiency contributes to reduced CPU / MCU overheads that translate to further reduce the system energy usage levels. The device also contains a specialized OTP (One-Time Programmable) Security Register that can be used for purposes such as unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc. Specifically designed for use in many different systems, the AT25XE011 supports read, program, and erase operations with a wide supply voltage range of 1.65V to 3.6V. No separate voltage is required for programming and erasing. 2. Pin Descriptions and Pinouts Table 2-1. Pin Descriptions Asserted Symbol Name and Function State Type CHIP SELECT: Asserting the CS pin selects the device. When the CS pin is deasserted, the device will be deselected and normally be placed in standby mode (not Deep Power-Down mode), and the SO pin will be in a high-impedance state. When the device is deselected, data will not be accepted on the SI pin. CS Low Input A high-to-low transition on the CS pin is required to start an operation, and a low-to-high transition is required to end an operation. When ending an internally self-timed operation such as a program or erase cycle, the device will not enter the standby mode until the completion of the operation. SERIAL CLOCK: This pin is used to provide a clock to the device and is used to control the flow of data to and from the device. Command, address, and input data present on the SI pin is always SCK - Input latched in on the rising edge of SCK, while output data on the SO pin is always clocked out on the falling edge of SCK. SERIAL INPUT: The SI pin is used to shift data into the device. The SI pin is used for all data input including command and address sequences. Data on the SI pin is always latched in on the rising edge of SCK. With the Dual-Output Read commands, the SI Pin becomes an output pin (I/O ) in conjunction 0 Input/ SI (I/O ) - 0 with other pins to allow two bits of data on (I/O ) to be clocked out on every falling edge of SCK. 1-0 Output To maintain consistency with the SPI nomenclature, the SI (I/O ) pin will be referenced as the SI 0 pin unless specifically addressing the Dual-I/O modes in which case it will be referenced as I/O 0. Data present on the SI pin will be ignored whenever the device is deselected (CS is deasserted). SERIAL OUTPUT: The SO pin is used to shift data out from the device. Data on the SO pin is always clocked out on the falling edge of SCK. With the Dual-Output Read commands, the SO Pin remains an output pin (I/O ) in conjunction 1 with other pins to allow two bits of data on (I/O ) to be clocked out on every falling edge of SCK. 1-0 Input/ SO (I/O ) - 1 Output To maintain consistency with the SPI nomenclature, the SO (I/O ) pin will be referenced as the SO 1 pin unless specifically addressing the Dual-I/O modes in which case it will be referenced as I/O 1. The SO pin will be in a high-impedance state whenever the device is deselected (CS is deasserted). AT25XE011 2 DS-25XE011059G6/2017