AT45DB021E 2-Mbit DataFlash (with Extra 64-Kbits), 1.65V Minimum SPI Serial Flash Memory Features Single 1.65V - 3.6V supply Serial Peripheral Interface (SPI) compatible Supports SPI modes 0 and 3 Supports RapidS operation Continuous read capability through entire array Up to 85MHz Low-power read option up to 15MHz Clock-to-output time (t ) of 6ns maximum V User configurable page size 256 bytes per page 264 bytes per page (default) Page size can be factory pre-configured for 256 bytes One SRAM data buffer (256/264 bytes) Flexible programming options Byte/Page Program (1 to 256/264 bytes) directly into main memory Buffer Write Buffer to Main Memory Page Program Flexible erase options Page Erase (256/264 bytes) Block Erase (2KB) Sector Erase (32KB) Chip Erase (2-Mbits) Advanced hardware and software data protection features Individual sector protection Individual sector lockdown to make any sector permanently read-only 128-byte, One-Time Programmable (OTP) Security Register 64 bytes factory programmed with a unique identifier 64 bytes user programmable Hardware and software controlled reset options JEDEC Standard Manufacturer and Device ID Read Low-power dissipation 200nA Ultra-Deep Power-Down current (typical) 3A Deep Power-Down current (typical) 25A Standby current (typical at 20MHz) 4.5mA Active Read current (typical) Endurance: 100,000 program/erase cycles per page minimum Data retention: 20 years Complies with full industrial temperature range Green (Pb/Halide-free/RoHS compliant) packaging options 8-lead SOIC (0.150 wide and 0.208 wide) 8-pad Ultra-thin DFN (5 x 6 x 0.6mm) 8-ball (2 x4 Array) Wafer Level Chip Scale Package Die in Wafer Form 8789HDFLASH1/2017Description The Adesto AT45DB021E is a 1.65V minimum, serial-interface sequential access Flash memory is ideally suited for a wide variety of digital voice, image, program code, and data storage applications. The AT45DB021E also supports the RapidS serial interface for applications requiring very high speed operation. Its 2,162,688 bits of memory are organized as 1,024 pages of 256 bytes or 264 bytes each. In addition to the main memory, AT45DB021E also contains one SRAM 2 buffer of 256/264 bytes. The Buffer can be used as additional system scratch memory, and E PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the Adesto DataFlash uses a serial interface to sequentially access its data. The simple sequential access dramatically reduces active pin count, facilitates simplified hardware layout, increases system reliability, minimizes switching noise, and reduces package size. The device is optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage, and low-power are essential. To allow for simple in-system re-programmability, AT45DB021E does not require high input voltages for programming. The device operates from a single 1.65V to 3.6V power supply for the erase and program and read operations. The AT45DB021E is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK). All programming and erase cycles are self-timed. 1. Pin Configurations and Pinouts Figure 1-1. Pinouts 8-Ball WLCSP 8-lead SOIC 8-pad UDFN Top View Bottom View Top View (through package) Pin 1 WP CS SI 1 8 SO SI 1 8 SO SCK 2 7 GND VCC RESET SCK 2 7 GND RESET 3 6 V CC RESET 3 6 V CC GND SCK CS 4 5 WP CS 4 5 WP SO SI Note: 1. The metal pad on the bottom of the UDFN package is not internally connected to a voltage potential. This pad can be a no connect or connected to GND. AT45DB021E 2 8789HDFLASH1/2017