RM3316-XSNI-B Dialog Semiconductor

RM331x Series 32 - 256 Kbit Ultra-Low Power Non-volatile Serial Memory SPI Bus Advance Datasheet Features Memory array: 32 - 256 Kbit EEPROM-compatible non-volatile serial memory Multiple supply voltages for minimum power consumption - VDDC-WR: 1.17 - 1.23V - VDDC-RD: 1.14 - 1.26V - VDDIO: 1.65 - 3.6V Serial peripheral interface (SPI) compatible - Supports SPI modes 0 and 3 1.0 MHz maximum clock rate Flexible Programming - Byte/Page Program (1 to 32 or 64Bytes) - Page size: 32 or 64 Bytes Hardware and Software Write Protection 128-byte OTP capability Ultra Low Energy Word Write - 32 bit Word Write consuming 50 nJ Low power consumption - 10 A active Read current 500 kbit/s (Typical) - 10 A active Write current 10 kbit/s (Typical) - 50 nA Ultra-Deep Power-Down current Auto Ultra-Deep Power-Down Device can enter Ultra-Deep Power-Down automatically after finishing a Write operation Self-timed write cycles Hardware reset 8-lead 8S1 SOIC package RoHS-compliant and halogen-free packaging Data Retention: 10 years o o Industrial operating temperature: -40 C to +85 C Based on Adesto s proprietary CBRAM technology DS-RM331x125E11/20181. Description The Adesto RM331x Series is a 32 - 256 Kbit, serial memory device that utilizes Adesto s CBRAM resistive technology. The memory device is optimized for low power operation offering lowest available power for data-transfer, power- down, and writing. In order to efficiently optimize power consumption, the device makes use of two supplies V , DDC and V . The two V supply signals must be tied together to supply write and I/O voltage (Figure 5-2). Read DDIO DDIO power is supplied from the V and the device consumes less than10 W at 500 Kbit/s. DDC The RM331x Series is accessed through a 4-wire SPI interface consisting of a Serial Data Input (SDI), Serial Data Output (SDO), Serial Clock (SCK), and Chip Select (CS). The maximum clock (SCK) frequency in read mode is 1.0 MHz. The device supports direct write eliminating the need to pre-erase. Writing into the device can be done from 1 to 32 or 64 bytes at a time and consumes less than 40 W. All writing is internally self-timed. The device has both Byte Word Write and Page Write capability. Page Write is from 1 to 32 or 64 bytes. The 32 bit word Write operation of CBRAM consumes only 10% of the energy consumed by a 32-bit word Write operation of EEPROM devices of similar size. Both random and sequential reads are available. Sequential reads are capable of reading the entire memory in one operation. The RM331x family contains the following memory and page sizes. Product Density Page Size (bytes) RM3316 256 Kbit 64 RM3315 128 Kbit 64 RM3314 64 Kbit 32 RM3313 32 Kbit 32 RM331x Series 2 DS-RM331x125E11/2018